Surface modification method of silicon carbide powder for recrystallization
A silicon carbide micropowder and surface modification technology, which is applied in the field of silicon carbide production, can solve the problems of long production cycle, unusability, and poor particle dispersion, and achieve the effects of short production cycle, increased added value, and reduced production cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0023] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:
[0024] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 at a mass ratio of 2:1:1 and deionized water with a conductivity of 30 μs / cm Add the mass ratio of 0.5:80 into the mixing tank and mix and stir for 20 minutes;
[0025] (2) The D50 value is 1.8 μm, and the specific surface area is 5m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 20 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 0.5:1;
[0026] (3) Add silicon carbide grinding media with a particle size of 3mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 55 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.1:1;
[0027] (4) ...
Embodiment 2
[0033] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:
[0034] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 in a mass ratio of 5:3:2 and deionized water with a conductivity of 50 μs / cm Add the mass ratio of 5:100 into the mixing tank and mix for 20-50 minutes;
[0035] (2) The D50 value is 3.4 μm, and the specific surface area is 7m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 50 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 1:2;
[0036] (3) Add silicon carbide grinding media with a particle size of 5mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 60 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.5:1;
[0037] (4) sieve the...
Embodiment 3
[0040] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:
[0041] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 at a mass ratio of 3:2:1 and deionized water with a conductivity of 40 μs / cm Add the mass ratio of 1:50 into the mixing tank and mix for 30 minutes;
[0042] (2) The D50 value is 2.5 μm, and the specific surface area is 6m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 30 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 1:1;
[0043] (3) Add silicon carbide grinding media with a particle size of 4mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 50 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.3:1;
[0044] (4) sieve the sti...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Conductivity | aaaaa | aaaaa |
| Conductivity | aaaaa | aaaaa |
| Conductivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More