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Surface modification method of silicon carbide powder for recrystallization

A silicon carbide micropowder and surface modification technology, which is applied in the field of silicon carbide production, can solve the problems of long production cycle, unusability, and poor particle dispersion, and achieve the effects of short production cycle, increased added value, and reduced production cost

Active Publication Date: 2016-11-09
LINSHUSNTIAN ABRASIVE +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the small particle size and high surface energy of silicon carbide powder, it is easy to cause agglomeration and form secondary particles, which makes it difficult to exert the advantages of ultrafine powder, and ultimately affects the excellent performance of the finished product
[0003] Existing modification methods of silicon carbide micropowder for recrystallization include wet method and dry method, wherein wet method modification has disadvantages such as high energy consumption, poor particle dispersibility, long production cycle, high labor intensity, and poor product stability. Moreover, the solid content of the obtained product is low when preparing silicon carbide slurry for recrystallization, and cannot be used for molding such as grouting.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:

[0024] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 at a mass ratio of 2:1:1 and deionized water with a conductivity of 30 μs / cm Add the mass ratio of 0.5:80 into the mixing tank and mix and stir for 20 minutes;

[0025] (2) The D50 value is 1.8 μm, and the specific surface area is 5m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 20 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 0.5:1;

[0026] (3) Add silicon carbide grinding media with a particle size of 3mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 55 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.1:1;

[0027] (4) ...

Embodiment 2

[0033] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:

[0034] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 in a mass ratio of 5:3:2 and deionized water with a conductivity of 50 μs / cm Add the mass ratio of 5:100 into the mixing tank and mix for 20-50 minutes;

[0035] (2) The D50 value is 3.4 μm, and the specific surface area is 7m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 50 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 1:2;

[0036] (3) Add silicon carbide grinding media with a particle size of 5mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 60 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.5:1;

[0037] (4) sieve the...

Embodiment 3

[0040] The surface modification method of silicon carbide micropowder for described recrystallization, comprises the following steps:

[0041] (1) The mixed modifier mixed with dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 at a mass ratio of 3:2:1 and deionized water with a conductivity of 40 μs / cm Add the mass ratio of 1:50 into the mixing tank and mix for 30 minutes;

[0042] (2) The D50 value is 2.5 μm, and the specific surface area is 6m 2 / g, silicon carbide powder with a silicon carbide content of not less than 98.5% is added to the mixing tank, stirred and mixed for 30 minutes, wherein the mass ratio of silicon carbide powder to deionized water is 1:1;

[0043] (3) Add silicon carbide grinding media with a particle size of 4mm and a silicon carbide content of not less than 99% into the mixing tank, and mix and stir for 50 hours, wherein the mass ratio of silicon carbide grinding media to deionized water is 0.3:1;

[0044] (4) sieve the sti...

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Abstract

The invention discloses a surface modification method of a silicon carbide powder for recrystallization, and belongs to the technical field of silicon carbide production. The invention solves the problems of high cost, long production cycle, high labor intensity, low solid content of the obtained product in the preparation of a silicon carbide slurry for recrystallization, and unsuitability for slip-casting in the prior art. The method includes the following steps: a mixed modifier and deionized water with conductivity of 30-50 mus / cm into a mixing tank, mixing by stirring for 20-50 min; adding a silicon carbide powder into the mixing tank, mixing by stirring for 20-50 min; adding a silicon carbide grinding medium into a mixing tank, mixing by stirring for 55-60 h; sieving the mixed material through a screen, and screening out the silicon carbide grinding medium; drying and crushing the material without the silicon carbide grinding medium, sieving through a screen of 300-500 mesh to obtain the modified silicon carbide powder for recrystallization. The invention can be used for surface modification of silicon carbide powder for recrystallization.

Description

technical field [0001] The invention relates to a method for surface modification of silicon carbide micropowder for recrystallization, belonging to the technical field of silicon carbide production. Background technique [0002] Silicon carbide ceramics have excellent characteristics such as high temperature strength, strong oxidation resistance, good wear resistance, good thermal stability, small thermal expansion coefficient, high thermal conductivity, high hardness and chemical corrosion resistance. Therefore, it has shown its talents in many fields and has been paid more and more attention by people. For silicon carbide ceramics, the preparation of uniform and stable dispersed powder is the key to successful sintering. However, due to the small particle size and high surface energy of silicon carbide powder, it is easy to cause agglomeration and form secondary particles, which makes it difficult to exert the advantages of ultrafine powder, and ultimately affects the ex...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/626
CPCC04B35/565C04B35/6261
Inventor 郝文虎龚志刚周强马光明韩宇张霞刘文兵
Owner LINSHUSNTIAN ABRASIVE