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Simple method for preparing carbon nanotube array-graphene mixed structure

A technology of carbon nanotube array and mixed structure, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as unavoidable, multi-step growth process, complex parameters, etc., to reduce costs, reduce Preparation link and time, optimize the effect of the preparation process

Active Publication Date: 2016-11-09
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In these methods, it is inevitable to form a graphene layer in advance and then grow into a nanotube array-graphene hybrid structure. In the process of transferring graphene, it will inevitably cause damage to the graphene layer. In addition, there are multi-step growth processes and parameters. Complicated and other disadvantages

Method used

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  • Simple method for preparing carbon nanotube array-graphene mixed structure

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Effect test

Embodiment 1

[0023] A simple method for preparing a carbon nanotube array-graphene hybrid structure, comprising the following steps:

[0024] 1. Slice the wafer, deionized water, and absolute ethanol for 10 minutes, then ultrasonically clean it. 2 Blow dry for later use;

[0025] 2. Weigh 2g of ferrocene with an electronic balance, measure 100ml of xylene with a graduated cylinder, mix it according to the 2% ratio, and dissolve it with ultrasound;

[0026] 3. Put the cleaned silicon wafer into the middle of the quartz tube and place it in the central heating zone of the heating furnace 2, put the prepared ferrocene and xylene solution near the inlet end of the quartz tube, and use a simple heating The device is wrapped outside the quartz tube at the position of the ferrocene and xylene solution, so as to heat the ferrocene and xylene. The experimental device diagram is shown in figure 1 shown;

[0027] 4. Using the chemical vapor deposition method, put the quartz tube into the furnace a...

Embodiment 2

[0031] 1. Slice the wafer, deionized water, and absolute ethanol for 10 minutes, then ultrasonically clean it. 2 Blow dry for later use;

[0032] 2. Weigh 6g of ferrocene with an electronic balance, measure 100ml of xylene with a graduated cylinder, mix it according to the 6% ratio, and dissolve it with ultrasound;

[0033] 3. Put the cleaned silicon wafer into the middle of the quartz tube and place it in the central heating zone of the heating furnace 2, put the prepared ferrocene and xylene solution near the inlet end of the quartz tube, and use a simple heating The device is wrapped outside the quartz tube at the position of the ferrocene and xylene solution, so as to heat the ferrocene and xylene;

[0034] 4. Using the chemical vapor deposition method, put the quartz tube into the furnace and heat it at a heating rate of 15°C / min. At the same time, pass Ar at a flow rate of 100 sccm to discharge the air in the tube, and raise the temperature to 850°C under the protection...

Embodiment 3

[0038] 1. Slice the wafer, deionized water, and absolute ethanol for 10 minutes, then ultrasonically clean it. 2 Blow dry for later use;

[0039] 2. Weigh 9g of ferrocene with an electronic balance, measure 100ml of xylene with a graduated cylinder, mix it according to the 9% ratio, and dissolve it with ultrasound;

[0040] 3. Put the cleaned silicon wafer into the middle of the quartz tube and place it in the central heating zone of the heating furnace 2, put the prepared ferrocene and xylene solution near the inlet end of the quartz tube, and use a simple heating The device is wrapped outside the quartz tube at the position of the ferrocene and xylene solution, so as to heat the ferrocene and xylene;

[0041] 4. Using the chemical vapor deposition method, put the quartz tube into the furnace and heat it at a heating rate of 30°C / min. At the same time, feed Ar at a flow rate of 100 sccm to discharge the air in the tube, and raise the temperature to 950°C under the protection...

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Abstract

The invention discloses a method for preparing a carbon nanotube array-graphene mixed structure, and belongs to the technical field of nanometer materials and preparation thereof. The method comprises the following steps: a silicon matrix is put in a quartz tube fully filled with such inert gas atmospheres as Ar and N2; such inert gases as Ar and N2 are introduced for heating to reach a growth temperature; then, a carbon source and catalyst mixture put in the quartz tube beforehand is heated to reach a proper temperature; and a certain quantity of H2 is introduced in the quartz tube to obtain the carbon nanotube array-graphene mixed structure. The method is simple in preparation process, has no need to respectively grow carbon nanotube arrays and graphene, and can simply realize one-step preparation of the carbon nanotube array-graphene mixed structure. The method effectively improves the efficiency of preparing the carbon nanotube array-graphene mixed structure, simplifies the growth flow, shortens the growth time, and reduces the preparation cost and the energy consumption.

Description

technical field [0001] The invention relates to a simple preparation method of a carbon nanotube array-graphene hybrid structure, in particular to a method for growing a carbon nanotube array-graphene hybrid structure in one step on a simple substrate. Background technique [0002] Due to their unique one-dimensional structure, carbon nanotubes have excellent mechanical properties, electrical properties, thermal conductivity, optics and hydrogen storage properties, making them widely used in energy storage and conversion, composite materials, heterogeneous catalysis, environmental protection and biomedicine. and other fields have great application potential. [0003] Graphene is a new type of nanomaterial with the thinnest, strongest, and strongest electrical and thermal conductivity found so far. [0004] Three-dimensional carbon structure materials have attracted extensive attention due to their excellent performance. Due to the structural characteristics of carbon nanotu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/448
CPCC23C16/26C23C16/448
Inventor 王立郭守晖范定环
Owner NANCHANG UNIV