Manufacturing method for high-aspect-ratio nano-scale metal structure

Abstract

The invention provides a manufacturing method for a high-aspect-ratio nano-scale metal structure. The manufacturing method comprises the steps of evaporating a metal material by electron beams to form a metal thin film pattern on a monocrystal silicon substrate with specific parameters; immersing the monocrystal silicon substrate with the metal thin film pattern on the surface into a mixed solution to be subjected to catalysis and corrosion for a certain time to form a high-aspect-ratio deep silicon groove in the monocrystal silicon substrate; taking the metal thin film at the bottom of the deep silicon groove as a conductive electroplating seed layer, immersing the monocrystal silicon substrate with the deep silicon groove into an electroplating liquid to be electroplated to increase the thickness of the metal thin film to the appointed height so as to form a metal structure with the appointed aspect ratio; and after the metal structure with the appointed aspect ratio is formed on the monocrystal silicon substrate, immersing the monocrystal silicon substrate into the mixed liquid to be subjected to isotropic wet etching for a certain time so as to remove the monocrystal silicon among the metal structures. By adoption of the manufacturing method, the manufactured nano-scale metal structure has a high aspect ratio.

Description

technical field [0001] The invention relates to the technical field of nano-processing, in particular to a method for manufacturing a nanoscale metal structure with a large aspect ratio. Background technique [0002] For phase-type diffractive optical elements in the high-precision X-ray band, in order to obtain the required phase, it is necessary to fabricate a nanoscale metal structure with a large aspect ratio. At present, in nanofabrication technology, it is mainly to use multi-layer glue technology and dry etching technology to make nanoscale metal structures with large aspect ratio, that is, to use relatively thick photoresist as a mask, and dry etching process for deep silicon etch. [0003] In the process of realizing the present invention, the inventor found that there are at least the following technical problems in the prior art: [0004] Due to the isotropic etching of the photoresist, its lateral etching accuracy is difficult to control, so that relatively thi...

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Problems solved by technology

[0005] In order to solve the above technical problems, the present invention provides a method for fabricating a nanoscale metal structure with a large aspect ratio, which can avoid the problem of pattern collapse during photoresist development and the steep line width that occurs during dry etching of deep silicon. The problem of poor density, and the nanoscale metal structure produced by it has a large aspect ratio

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