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Lead-free piezoelectric thin film material and preparing method thereof

A thin film material, lead-free piezoelectric technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as ecological environment and human health hazards, achieve good product quality, stable performance, raw materials rich effects

Inactive Publication Date: 2016-11-16
ANYANG HUASEN PAPER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above situation, in order to overcome the defects of the prior art, the purpose of the present invention is to provide a lead-free piezoelectric thin film material and its preparation method, which can effectively solve the problem of the preparation of lead-based thin film materials and the process of preparation, use and disposal. Hazards to the ecological environment and human health

Method used

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  • Lead-free piezoelectric thin film material and preparing method thereof
  • Lead-free piezoelectric thin film material and preparing method thereof
  • Lead-free piezoelectric thin film material and preparing method thereof

Examples

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Embodiment 1

[0033] The chemical structure formula of the lead-free piezoelectric film material of the present invention is (1- x )Bi 0.5 Na 0.5 TiO 3 - x BiCoO 3 , Where x is 0.025, that is, the chemical structure of the lead-free piezoelectric film material is 0.975Bi 0.5 Na 0.5 TiO 3 -0.025BiCoO 3 , Its preparation method includes the following steps:

[0034] A. Preparation of BNT-BC target: solid-phase reaction method is used to prepare BNT-BC target, specifically:

[0035] (1) According to 0.975Bi 0.5 Na 0.5 TiO 3 -0.025BiCoO 3 The stoichiometric stoichiometry in the chemical formula is the raw material Bi 2 O 3 , NaCO 3 , TiO 2 And Co 2 O 3 , In order to prevent the volatilization of Bi and Na during the film preparation process, when weighing the raw materials, Bi 2 O 3 And NaCO 3 Both need 20% molar excess;

[0036] (2) Put the weighed raw materials in step (1) into a ball mill tank, use ethanol as the medium, and ball mill for 24 hours, and then dry the ball milled slurry at 105°C to obt...

Embodiment 2

[0050] The chemical formula of the lead-free piezoelectric film material of the present invention is 0.985Bi 0.5 Na 0.5 TiO 3 -0.015BiCoO 3 , Its preparation method is the same as in Example 1.

Embodiment 3

[0052] The chemical formula of the lead-free piezoelectric film material of the present invention is 0.97Bi 0.5 Na 0.5 TiO 3 -0.03BiCoO 3 , Its preparation method is the same as in Example 1.

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Abstract

The invention relates to a lead-free piezoelectric thin film material and a preparing method thereof. The problem of harms caused in the preparation, using and abandoning processes of a lead-based thin film material to the ecological environment and the human health is solved. According to the technical scheme, the lead-free piezoelectric thin film material is a sodium bismuth titanate-cobalt acid bismuth lead-free piezoelectric thin film material (1-(i)x( / i))Bi0.5Na0.5TiO3-(i)x( / i))BiCoO3(BNT-BC), wherein (i)x( / i) indicates the mole number, and the (i)x( / i) is larger than 0 and smaller than or equal to 0.06. According to the preparing method, PLD is adopted for preparing a sodium bismuth titanate-cobalt acid bismuth lead-free piezoelectric thin film. The lead-free piezoelectric thin film material is simple in component, abundant in raw material, easy to prepare, good in product quality and stable and excellent in performance, is an innovation on the lead-free piezoelectric thin film material, and has the good economical and social benefits.

Description

Technical field [0001] The invention relates to a piezoelectric film material, in particular to a lead-free piezoelectric film material and a preparation method thereof. Background technique [0002] With the development of devices towards integration and miniaturization, ferroelectric thin film materials are used in microelectronics with their excellent electrical and optical properties such as excellent dielectric, piezoelectric, pyroelectric, ferroelectric, and excellent electro-optical and nonlinear optical properties. The fields of MEMS, MEMS, optoelectronics, and integrated optics all have very good application prospects and huge potential markets. The research of ferroelectric thin films has become one of the frontiers and hotspots of current high-tech research. [0003] According to the different properties of ferroelectric films, the fields of application are also different. For example, ferroelectric films with excellent dielectric properties can be used in capacitors, dy...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34C23C14/58
CPCC23C14/08C23C14/3414C23C14/5806
Inventor 刘洁郭菲菲
Owner ANYANG HUASEN PAPER
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