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A preparation method of waveguide amplifier with erbium-doped tantalum oxide ridge structure

A technology of waveguide amplifier and ridge waveguide, which is applied in the field of optical communication, can solve problems such as difficulties in preparing rectangular waveguides, clusters and concentration quenching, unaided signal light amplification, etc., and achieve good stability, high yield and low process cost low effect

Active Publication Date: 2021-04-06
派尼尔科技(天津)有限公司
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Problems solved by technology

The main problems of this kind of optical waveguide amplifier are: first, the surface effect of nanoparticles is easy to cause clusters and concentration quenching, resulting in the up-conversion luminescence of the device, and the up-conversion luminescence is not conducive to the amplification of signal light; second, due to SiO2, The existence of inorganic components such as LaF3 makes it difficult to prepare rectangular waveguides by dry etching

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  • A preparation method of waveguide amplifier with erbium-doped tantalum oxide ridge structure
  • A preparation method of waveguide amplifier with erbium-doped tantalum oxide ridge structure

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Embodiment Construction

[0033] The present invention will be further described below with reference to the accompanying drawings and examples, and the embodiments of the present invention include but not limited to the following examples.

[0034] Embodiment: In order to achieve the above object, the technical scheme adopted in the present invention is as follows:

[0035] Such as figure 1 As shown, the present invention provides a method for preparing a waveguide amplifier with an erbium-doped tantalum oxide ridge structure, comprising the following steps:

[0036] (1) Select optical-grade double-throwing 0.5mm thick lithium niobate single crystal as the initial material, clean the wafer and plate 10-20nm metal erbium on the surface, and oxidize it in the air at 1100°C to form partially erbium-doped niobium Lithium oxide crystal, the doping concentration of erbium is 0.5-1.5mol%, and a layer of local erbium-doped lithium niobate single crystal thin film is formed on the erbium-doped surface of the ...

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Abstract

The invention discloses a method for preparing a waveguide amplifier with an erbium-doped tantalum oxide ridge structure. The amplifier produced by the invention includes a silicon substrate, a silicon dioxide lower cladding layer, an erbium-doped lithium niobate film layer, a silicon dioxide The buffer layer, erbium-doped tantalum oxide ridge waveguide structure and silicon dioxide upper cladding layer use silicon-based lithium niobate film as the substrate, and use erbium-doped tantalum oxide with a similar refractive index to lithium niobate as the ridge structure. In the communication band, through the amplification of erbium ions, it can compensate for the optical loss caused by the process of optical transmission and modulation; compared with dry etching technology, the prepared ridge structure has low process cost and high yield, which improves the reliability of the device. Stability, with the advantages of simple manufacturing process, small device size, small bending radius, and good stability.

Description

technical field [0001] The invention belongs to the technical field of optical communication, and in particular relates to a preparation method of a waveguide amplifier with an erbium-doped tantalum oxide ridge structure. Background technique [0002] In the 21st century with the rapid development of science and technology, information network has become an indispensable part of people's life. The application of the network is more and more extensive, and the speed and capacity of the traditional electro-optical network can no longer meet people's needs. Optical fiber communication technology has become a new direction for the development of communication technology by virtue of its advantages of wide frequency band, low loss, immunity to electromagnetic wave interference and abundant resources. [0003] In actual optical fiber communication, loss phenomena such as absorption, scattering and bending inevitably exist. At present, the loss coefficient of the general standard...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/39H01S3/16
CPCG02F1/395H01S3/1608
Inventor 华平壤陈朝夕
Owner 派尼尔科技(天津)有限公司
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