Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phenolic resin, epoxy resin containing the phenolic resin, cured product of the epoxy resin composition, and semiconductor device having the cured product

A technology of phenolic resin and epoxy resin, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as substrate material warpage, achieve high thermal shrinkage rate, reduce warpage, and thermal expansion rate high effect

Active Publication Date: 2016-11-16
UBE IND LTD
View PDF13 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of this, unlike conventional single-sided sealed packages, there is a problem that warpage occurs on the substrate material side due to the influence of shrinkage of the substrate material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phenolic resin, epoxy resin containing the phenolic resin, cured product of the epoxy resin composition, and semiconductor device having the cured product
  • Phenolic resin, epoxy resin containing the phenolic resin, cured product of the epoxy resin composition, and semiconductor device having the cured product
  • Phenolic resin, epoxy resin containing the phenolic resin, cured product of the epoxy resin composition, and semiconductor device having the cured product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0107] Add 134 parts (1.0 mol) of o-allylphenol, 32 parts (0.98 mol) of 92% paraformaldehyde, pure 0.4 parts of water and 1.1 parts of oxalic acid. After reacting at 100°C for 12 hours under reflux and further reacting at 160°C for 2 hours, it was cooled to 95°C. After cooling, 130 parts of pure water of 90° C. or higher were thrown in and washed with water. Thereafter, by raising the internal temperature to 160° C. and performing a decompression-steaming treatment, unreacted components were removed to obtain a novolac resin A (R in general formula (1) is an allyl group, p=1 , q=1 novolac resin). The obtained novolac resin A had a softening point of 73° C., a melt viscosity at 150° C. of 4.3P, a hydroxyl equivalent of 170 g / eq, and a gelation time of 72 seconds. The compound of n=0 measured by gel permeation chromatography was 5.9 area % of the whole phenolic resin, and the compound of n=1 was 6.2 area % of the whole phenolic resin.

Embodiment 2

[0109] Add 134 parts (1.0 moles) of o-allylphenol, 36 parts (1.1 moles) of 92% paraformaldehyde, pure 0.4 parts of water and 1.1 parts of oxalic acid. After reacting at 100°C for 12 hours under reflux and further reacting at 160°C for 2 hours, it was cooled to 95°C. After cooling, 130 parts of pure water of 90° C. or higher were thrown in and washed with water. Thereafter, by raising the internal temperature to 160° C. and performing a decompression-steaming treatment, unreacted components were removed to obtain a novolak resin B (R in general formula (1) is an allyl group, p=1 , q=1 novolac resin). The obtained novolak resin B had a softening point of 98°C, a melt viscosity at 150°C of 20P, and a hydroxyl equivalent of 172 g / eq.

Embodiment 3

[0111]In a glass flask with a capacity of 2000 parts equipped with a thermometer, a feed / distillation outlet, a cooler and a stirrer, 1200 parts (9.0 moles) of o-allylphenol, 127 parts (1.8 moles) of 42% formalin, And 12 parts of oxalic acid. The reaction was carried out at 100° C. for 7 hours under reflux. After completion of the reaction, 600 parts of pure water of 90° C. or higher were thrown in and washed with water. Thereafter, by raising the internal temperature to 160° C. and performing a decompression-steaming treatment, unreacted components were removed to obtain a novolac resin C (R in the general formula (1) is an allyl group, p=1 , q=1 novolac resin). The obtained novolak resin C was liquid at normal temperature, and had a hydroxyl equivalent of 141 g / eq.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
elastic modulusaaaaaaaaaa
softening pointaaaaaaaaaa
epoxy equivalentaaaaaaaaaa
Login to View More

Abstract

The phenol resin of the present invention is represented by general formula (1). The phenolic resin imparts to a cured product, which is produced from the phenolic resin, an epoxy resin represented by general formula (2) and a curing accelerator, a thermal expansion coefficient of 1.5% or more at temperatures above 40DEG C and below 180DEG C. The phenolic resin is preferably the one which can impart to the cured product a storage elastic modulus of 15 MPa or more at 250DEG C Preferably,

Description

technical field [0001] This invention relates to phenolic resins. In addition, the present invention also relates to an epoxy resin composition containing the phenolic resin and a cured product of the epoxy resin composition. Furthermore, the present invention relates to a semiconductor device having the cured product. Background technique [0002] Epoxy resin compositions are widely used in the fields of electrical and electronic components, structural materials, adhesives, coatings, etc. due to their workability and excellent electrical properties, heat resistance, adhesiveness, and moisture resistance of their cured products. use. [0003] In recent years, along with the improvement in performance, miniaturization, and thinning of electronic devices such as smartphones and tablet terminals, the increase in pin numbers, high integration, miniaturization, and thinning of semiconductor devices is accelerating. Therefore, in conventional single-sided sealed packages such a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G8/10C08G59/62H01L23/29H01L23/31
CPCH01L23/293C08G8/12C08G8/22C08L61/06C08L61/12H01L2924/0002C08L63/00H01L2924/00C08G18/12C08G18/22
Inventor 冈本慎司中江胜竹之内真人
Owner UBE IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com