Four-footed quantum dot, light-emitting diode based on four-footed quantum dot and preparation method thereof

A light-emitting diode and quantum dot light-emitting technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problems of preparing light-emitting diodes without quadruped quantum dots, and achieve long life, high luminous efficiency, and fluorescence The effect of excellent performance

Active Publication Date: 2016-12-07
TCL CORPORATION
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quadruped quantum dot, a light-emitting diode based on the quadruped quantum dot and its preparation method, aiming at solving the problem that the quadruped quantum dot is not used as a Problems of Luminescent Materials Used in Preparation of Light Emitting Diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Four-footed quantum dot, light-emitting diode based on four-footed quantum dot and preparation method thereof
  • Four-footed quantum dot, light-emitting diode based on four-footed quantum dot and preparation method thereof
  • Four-footed quantum dot, light-emitting diode based on four-footed quantum dot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention provides a quadruped quantum dot, a light-emitting diode based on the tetrapod quantum dot and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0032] combine figure 1 as shown, figure 1 It is a schematic flow diagram of a preferred embodiment of a method for preparing a tetrapod quantum dot of the present invention, which includes steps:

[0033] Preparation of cadmium precursor mixed solution: mix cadmium oxide, oleic acid, n-propylphosphonic acid and trioctylphosphine oxide, then heat the mixed solution to 110-180°C under vacuum and degas for 20-60min, then put The degassed mixed solution is heated to 280~330°C under an inert atmosphere until...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a four-footed quantum dot, a light-emitting diode based on the four-footed quantum dot and a preparation method thereof. The preparation method includes the steps that a cadmium precursor mixed solution is prepared: cadmium oxide, oleic acid, n-propyl phosphonic acid and trioctylphosphine are mixed, then heating and degassing are performed under vacuum, heating is performed to reach the temperature of 280-330 DEG C till a clear and transparent solution is obtained; a sulfur precursor mixed solution is prepared: sulfur powder and trioctylphosphine are mixed and stirred under the inert atmosphere; the CdSe / CdS four-footed quantum dot is prepared: sphalerite CdSe quantum dots are injected into the prepared cadmium precursor mixed solution, the temperature rises to reach the temperature of 310-350 DEG C, the prepared sulfur precursor mixed solution is injected, and the heating is stopped; n-hexane is injected when cooling is performed to reach the temperature of 95-105 DEG C, and product purification is performed. The four-footed quantum dot is used as the material for a luminescent layer to prepare the light-emitting diode, and accordingly the efficient light-emitting diode high in light-emitting purity and long in service life is manufactured.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to quadruped quantum dots, light-emitting diodes based on tetrapod quantum dots and a preparation method thereof. Background technique [0002] Semiconductor quantum dots, nanometer-sized particles with unique optical and electrical properties, are currently in the midst of a wide range of research phases and applications, including lighting, displays, solar energy conversion, and molecular and cellular imaging. In recent years, quantum dots have been applied in the field of display devices. Light-emitting diodes based on quantum dots as light-emitting materials have the advantages of high light color purity, high luminous quantum efficiency, long service life, and printable preparation, and have become the research of new LED light-emitting materials. hot spot. [0003] The device design and working principle of quantum dot light-emitting diode devices are similar to organic l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 刘政杨一行曹蔚然钱磊向超宇
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap