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Silicon carbide-ruthenium resistance slurry and preparation method therefor

A technology of resistance paste and silicon carbide, which is applied in the direction of ohmic resistance heating, electric heating devices, electrical components, etc., can solve the problem that the thickness consistency of the resistance film is not easy to control, the heater is difficult to miniaturize and thin, and the production of resistance wire or film Complicated process and other issues, to achieve the effect of excellent thermal radiation performance, good printability and wettability, good dispersibility and co-solubility

Inactive Publication Date: 2016-12-07
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the traditional nickel-chromium alloy resistance wire or resistance film, it has been unable to meet the technical development requirements
[0003] Moreover, for existing resistance wire heaters or resistance film heaters, it all has the following disadvantages: (1) the manufacturing process of resistance wire or film is complex, the production cycle is long, and the production cost is high; (2) the manufacturing process of heating plate Complicated, it is difficult to reduce the thickness and weight of the heating plate; (3) The resistance wire or film is easy to detach from the substrate, and the resistance film is easy to detach from the substrate, resulting in a shortened product life; (4) Limited by the shape of the resistance wire, it is difficult to miniaturize the heater , Thinning; (5) The thickness consistency of the resistive film is not easy to control, and it is easy to cause low yield rate; and the circuit is prepared by etching, which is not conducive to environmental protection

Method used

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  • Silicon carbide-ruthenium resistance slurry and preparation method therefor
  • Silicon carbide-ruthenium resistance slurry and preparation method therefor
  • Silicon carbide-ruthenium resistance slurry and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A silicon carbide-ruthenium resistance slurry, in weight percent, comprises the following components:

[0044]

[0045] Its preparation method comprises the following steps:

[0046] (1) Preparation of functional phase: Mix ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder evenly to obtain a functional phase, wherein the particle size of ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder 3μm, 3μm, 2.5μm respectively;

[0047] (2) Preparation of additives: Stir and mix liquid defoamer, liquid leveling agent, and wetting and dispersing agent evenly to obtain additives;

[0048] (3) Prepare the organic vehicle: mix the resin and the solvent evenly, stir until the resin dissolves, then add the additive prepared in step (2), and stir evenly to obtain the organic vehicle;

[0049] (4) Weighing the functional phase prepared in step (1) and the organic carrier prepared in step (3), pre-mixing the we...

Embodiment 2

[0052] A silicon carbide-ruthenium resistance slurry, in weight percent, comprises the following components:

[0053]

[0054] Its preparation method comprises the following steps:

[0055] (1) Preparation of functional phase: Mix ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder evenly to obtain a functional phase, wherein the particle size of ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder 1μm, 1μm, 2μm respectively;

[0056] (2) Preparation of additives: Stir and mix liquid defoamer, liquid leveling agent, and wetting and dispersing agent evenly to obtain additives;

[0057] (3) Prepare the organic vehicle: mix the resin and the solvent evenly, stir until the resin dissolves, then add the additive prepared in step (2), and stir evenly to obtain the organic vehicle;

[0058] (4) Weighing the functional phase prepared in step (1) and the organic carrier prepared in step (3), pre-mixing the weig...

Embodiment 3

[0061] A silicon carbide-ruthenium resistance slurry, in weight percent, comprises the following components:

[0062]

[0063] Its preparation method comprises the following steps:

[0064] (1) Preparation of functional phase: Mix ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder evenly to obtain a functional phase, wherein the particle size of ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder 800nm, 500nm, 1μm respectively;

[0065] (2) Preparation of additives: Stir and mix liquid defoamer, liquid leveling agent, and wetting and dispersing agent evenly to obtain additives;

[0066](3) Prepare the organic vehicle: mix the resin and the solvent evenly, stir until the resin dissolves, then add the additive prepared in step (2), and stir evenly to obtain the organic vehicle;

[0067] (4) Weighing the functional phase prepared in step (1) and the organic carrier prepared in step (3), pre-mixing the w...

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Abstract

The invention discloses silicon carbide-ruthenium resistance slurry. The silicon carbide-ruthenium resistance slurry comprises a functional phase and an organic carrier, wherein the functional phase comprises ultrafine ruthenium powder, ultrafine silicon carbide powder and lead-free glass powder; the organic carrier comprises resin, a solvent and additives; the resin is ethylcellulose; the solvent is one or mixture of two of butyl carbitol, terpilenol and a DBE solvent; and the additives comprise a liquid defoaming agent, a liquid flatting agent and a lubricating dispersing agent. The invention also discloses a preparation method for the silicon carbide-ruthenium resistance slurry. The silicon carbide-ruthenium resistance slurry is high in dispersity and cosolvency, high in adhesive force with a base material, excellent in temperature resistance, safe to use, and low in preparation cost.

Description

Technical field: [0001] The invention relates to the technical field of resistance devices, in particular to a silicon carbide-ruthenium resistance paste. Background technique: [0002] The heating method of ordinary heaters uses traditional nickel-chromium alloy and other resistance wires or resistance films as heating materials. The thinning, miniaturization, and specialization of the device put forward higher requirements. For the traditional nickel-chromium alloy resistance wire or resistance film, it has been unable to meet the technical development requirements. [0003] Moreover, for existing resistance wire heaters or resistance film heaters, it all has the following disadvantages: (1) the manufacturing process of resistance wire or film is complicated, the production cycle is long, and the production cost is high; (2) the manufacturing process of heating plate Complicated, it is difficult to reduce the thickness and weight of the heating plate; (3) The resistance ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/12
CPCH05B3/12H05B2203/017
Inventor 徐方星苏冠贤高丽萍
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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