Technological method of shield grid trench-type power MOS device
A technology of MOS devices and process methods, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor withstand voltage, insufficient film thickness, and low withstand voltage of trench gates, and achieve film thickness uniformity Better, reduce the generation of easy breakdown points, and grow well
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0019] The process method of a shielded gate trench type power MOS device according to the present invention includes the following process steps:
[0020] In the first step, trench etching is performed on the silicon substrate, and then a sacrificial oxide layer is formed; image 3 Shown.
[0021] The second step is to deposit a pad oxide layer, deposit polysilicon and etch back to form the bottom polysilicon in the trench; Figure 4 Shown.
[0022] The third step is to grow a dielectric oxide film between polysilicon layers; Figure 5 Shown.
[0023] The fourth step is to grow a thermal oxide layer on the surface of the entire silicon wafer; the thickness of the thermal oxide layer formed is Such as Image 6 Shown.
[0024] Step 5: Re-etch the thermal oxide layer; remove all the thermal oxide layer formed on the surface of the silicon wafer. After the thermal oxide layer process, the angle transition between the upper surface of the bottom polysilicon and the sidewall of the trench ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap