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Method for manufacturing chip-on-film package lighting assembly and chip-on-film package lighting assembly thereof

A light-emitting component and thin-film flip-chip technology, which is applied to electrical components, semiconductor devices, circuits, etc., can solve problems such as light loss, and achieve the effect of improving operating efficiency and light extraction rate

Active Publication Date: 2017-01-04
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to total reflection at the semiconductor-air interface, most of the light reflected within the semiconductor LED material is lost

Method used

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  • Method for manufacturing chip-on-film package lighting assembly and chip-on-film package lighting assembly thereof
  • Method for manufacturing chip-on-film package lighting assembly and chip-on-film package lighting assembly thereof
  • Method for manufacturing chip-on-film package lighting assembly and chip-on-film package lighting assembly thereof

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Experimental program
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Embodiment

[0030] Such as figure 1 As shown, a sapphire is provided as a growth substrate 100 , and an epitaxial film having a structure of an N-type semiconductor layer 101 , an active layer (not shown in the figure) and a P-type semiconductor layer 102 is grown on the substrate 100 . The thin film is composed of P-type III-V thin film, N-type III-V thin film and light-emitting active layer. The III-V thin film can be composed of III-group boron, aluminum, gallium, indium and V-group nitrogen, phosphorus, arsenic arranged in combination. The emission wavelength of the active layer is between 200nm~1150nm, preferably in the ultraviolet band, such as UV-C band (200~280nm), UV-B band (280~315nm) and UV-A band (315~380nm).

[0031] Such as figure 2 As shown, the P-type semiconductor layer 102 and the N-type semiconductor layer 101 are etched out by dry etching, and the electrode reflection layer 103 is fabricated on the P-type semiconductor layer 102; the electrode reflection layer is p...

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Abstract

The invention discloses a method for manufacturing a chip-on-film package lighting assembly and a chip-on-film package lighting assembly thereof. The method comprises the following steps: providing a lighting epitaxial wafer which is composed of a growth substrate and a lighting epitaxial lamination; providing an insulating heat dissipation pedestal, manufacturing positive and negative bonded electrodes, filling the height difference between the positive and negative bonded electrodes with a filler; based on the relative positions of the electrodes, bonding the lighting epitaxial wafer on the bonded electrodes of the heat dissipation pedestal in a chip-on-film packaging manner; peeling off the growth substrate of the lighting epitaxial wafer, conducting spin coating on the surface of the lighting epitaxial lamination with fluorescence powder so as to cover the lighting epitaxial lamination; singularizing the lighting epitaxial wafer, exposing the positive and negative bonded electrodes of the heat dissipation pedestal, thus forming the chip-on-film package lighting assembly.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor light-emitting device, more specifically to a manufacturing method of a thin-film flip-chip light-emitting component and the thin-film flip-chip light-emitting component. Background technique [0002] Light-emitting diodes of solid-state light-emitting devices have low energy consumption, long life, good stability, small size, fast response speed, and stable light-emitting wavelength and other good optoelectronic properties. They are widely used in lighting, home appliances, display screens, and indicator lights. This type of light-emitting device has made considerable progress in terms of light efficiency and service life, and is expected to become the mainstream of a new generation of lighting and light-emitting devices. [0003] For LED chips using insulating substrates such as sapphire and AlN, the thermal conductivity of the substrate is relatively low, so the temperature of the PN...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/50H01L33/64
CPCH01L33/0093H01L33/22H01L33/505H01L33/641H01L2933/0041H01L2933/0075
Inventor 江彦志李佳恩郑建森徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD