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Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw

A technology of diamond wire saw and polysilicon wafer, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of low cost, weak appearance, and simple and easy process

Inactive Publication Date: 2017-01-18
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw
  • Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw
  • Pretreatment method of polysilicon film texturing for cutting solar cell by diamond wire saw

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Experimental program
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Effect test

Embodiment 1

[0018] The diamond wire saw cut polysilicon wafer sample was heated to 950°C in the air in a box-type muffle furnace for 1 hour, then the power was turned off, and the temperature was lowered to below 100°C with the furnace and released from the furnace. The sample was etched for 4 minutes under conventional wet texturing conditions, rinsed with dilute alkali solution, rinsed with pure water, dried, and then measured for surface light reflectance.

Embodiment 2

[0020] The diamond wire saw cut polysilicon wafer sample was heated to 800°C in the air in a box-type muffle furnace for 1 hour, then the power was turned off, and the temperature was lowered to below 100°C with the furnace and released from the furnace. The sample was etched for 2.5 minutes under conventional wet texturing conditions, rinsed with dilute alkaline solution, rinsed with pure water, dried, and then measured for surface light reflectance.

Embodiment 3

[0022] The diamond wire saw cut polysilicon wafer sample was heated to 700°C in the air in a box-type muffle furnace for 2 hours, then the power was turned off, and the temperature was lowered to below 100°C with the furnace. The sample was etched for 1.5 minutes under conventional wet texturing conditions, rinsed with dilute alkali solution, rinsed with pure water, dried, and then measured for surface light reflectance.

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Abstract

The invention provides a pretreatment method of polysilicon film texturing for cutting a solar cell by a diamond wire saw. The method is characterized in that the a diamond wire saw cutting polysilicon silicon is heated to 500 to 1000 DEG C, the temperature is maintained for 0.5 to 6 hours, and then the temperature of the diamond wire saw cutting polysilicon silicon is slowly and naturally reduced to be under 100 DEG C. According to the method, the diamond wire saw cutting polysilicon silicon is suitable for conventional wet method texturing, the average surface light reflection rate is reduced to a level of 20% to 23%, as shown in Table 1; the texturing surface micro morphology is uniform and round and is not distributed along cutting lines, the cutting mark appearance is reduced remarkably, the processing process is simple, the cost is low, and the method is suitable for large-scale production and application.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon solar cells, and relates to a method for anti-reflection etching and texturing of the surface of polycrystalline silicon wafers used for diamond-cut solar cells, especially to solve the problem of incompatibility with conventional pickling wet texturing technology through annealing pretreatment method. Background technique [0002] Polycrystalline silicon wafers used in the manufacture of polycrystalline silicon solar cells are generally cut with steel wire and abrasive mortar, referred to as mortar cutting, and the surface anti-reflection texturing generally adopts hydrofluoric acid-nitric acid mixed acid solution wet etching method, hereinafter referred to as conventional wet texturing . It has the advantages of low cost, mature production line equipment and process, and has become a common technology in the polycrystalline silicon solar cell manufacturing industry. [0003] After ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/18Y02E10/50Y02P70/50
Inventor 周浪肖志刚魏秀琴
Owner NANCHANG UNIV
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