Design of OTP (one time programmable) memory with reading threshold affected by parasitic capacitor
A parasitic capacitance and memory technology, applied in the field of OTP memory circuits, can solve problems such as the influence of readout threshold
Inactive Publication Date: 2017-01-25
毛冬冬
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However, under certain circumstances, such as the special structure of the anti-fuse in the memory cell used or for the consideration of the withstand voltage of the tube in the memory cell, the drain terminal node of the gate transistor of the anti-fuse memory cell will have a parasitic capacitance, thus affecting The readout threshold has a large effect on
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[0017] The present invention will be described in detail below in conjunction with the accompanying drawings and examples.
[0018] Such as figure 1 As shown, the readout system includes address PAD input, address detection, pulse extension, sense amplifier, first-stage DICE latch, second-stage DICE latch, bidirectional data port, and data PAD output. Among them, the sense amplifier is the core of the whole readout circuit, and the simple schematic diagram of the sense amplifier is as follows figure 2 As shown, P1 is a pre-charge tube, which charges the bit line when it is turned on. During this time, the discharge tube N1 is turned off, and the bit line is discharged through the selected memory cell. The P1 tube initially works in the saturation region. INV is a key inverter, and its flipping threshold is a key factor to ensure correct reading. BL is a bit line, and there are 256 loads hanging on the bit line in the present invention, including a selected storage unit to b...
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In an OTP (one time programmable) memory, the presence of a parasitic capacitor in an anti-fuse memory unit causes a great influence on a reading threshold of the programmed OTP memory, and seriously, programming data may not be correctly read, so that a failure of a reading mechanism is caused. On the basis of introducing functions of an overall reading circuit and a sensitivity amplifier of the OTP memory, through theoretical analysis and simulation, the influence of the parasitic capacitor in the anti-fuse memory unit on the reading threshold of the OTP memory is elaborated and a solution is put forward, so that the influence of the parasitic capacitor in the memory unit on the reading threshold of the OTP memory is eliminated and the reading threshold of the memory is guaranteed to the maximum extent. Therefore, through the design, the reading threshold of the OTP memory can be guaranteed to the maximum extent, the programming efficiency of an OTP memory user is improved and the yield of chips is increased.
Description
technical field [0001] The invention belongs to the technical field of digital integrated circuits, and relates to an OTP storage circuit whose reading threshold is affected by parasitic capacitance. In particular, the patent expounds the impact of parasitic capacitance in the OTP memory storage unit on the OTP memory through a large number of theoretical analysis and simulation. Read the impact of the threshold. Background technique [0002] As a non-volatile memory that can only be programmed once, OTP (one time programmable) memory has the characteristics of high integration and fast access speed. play an irreplaceable role. [0003] There are many types of OTP memory, many of which are based on fuses and antifuse. The OTP memory introduced in this article is based on the antifuse structure. In the anti-fuse OTP memory, the internal structure of the memory cell is changed by programming the selected cell. Under an ideal read mechanism, unprogrammed memory cells will re...
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IPC IPC(8): G11C17/18
Inventor 毛冬冬
Owner 毛冬冬