Manufacturing method of thin film chip and thin film chip thereof

Abstract

The invention provides a manufacturing method of a thin film chip and the thin film chip thereof. The manufacturing method comprises the following steps: providing a luminescent epitaxial wafer composed of a growth substrate and a luminescent epitaxial laminating layer, and manufacturing a plurality of chip structure layers on the luminescent epitaxial laminating layer, wherein cutting channels are defined on the surface of the luminescent epitaxial laminating layer between the adjacent chip structures; marking off groove structures on the cutting channels in advance, and running through the groove structures to the interior of the growth substrate; thinning according to the dimensions of the groove structures along the back face of the growth substrate until the growth substrate is removed and the luminescent epitaxial laminating layer is exposed out; carrying out simplified treatment, and separating the luminescent epitaxial wafer into a plurality of thin film chips.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor light emitting device, more specifically to a manufacturing method of a thin film chip and the thin film chip. Background technique [0002] The light-emitting diode (LED) of the solid-state light-emitting device has low energy consumption, long life, good stability, small size, fast response speed and stable light-emitting wavelength and other good photoelectric characteristics, and is widely used in lighting, home appliances, display screens and indicator lights, etc. field. This type of light-emitting device has made considerable progress in terms of light efficiency and service life, and is expected to become the mainstream of a new generation of lighting and light-emitting devices. [0003] For LED chips using insulating substrates such as sapphire and AlN, the thermal conductivity of the substrate is relatively low, so the temperature of the PN junction of LEDs with a lateral str...

AI Technical Summary

Problems solved by technology

However, the laser lift-off method will damage the epitaxy at local high temperature and reduce the reliability of the device.

There are also methods of grinding or dry etching to remove the substrate, but the cost is high, and the grinding position and dry etching position cannot be precisely controlled

In addition, due to the lattice mismatch between GaN and AlN, at present, deep ultraviolet light-emitting diodes usually grow AlN layers on sapphire substrates, but the substrates are difficult to lift off by laser; Instantly releases stress and breaks easily

For LED chips with a flip-chip structure, the roughening effect of the sapphire substrate is poor. To roughen the back of the AlN layer, the sapphire often needs to be ground off. At present, it is difficult to achieve precise control of grinding the sapphire without grinding off the epitaxial layer.

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