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Preparation technique of high-purity nickel ingot for semiconductor target

A preparation process and semiconductor technology, which is applied in the field of preparation process of high-purity nickel ingots for semiconductor targets, and can solve problems such as unfavorable preparation process

Inactive Publication Date: 2017-02-15
宝鸡一众有色金属材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the material is dependent on imports, and its preparation process is ominous

Method used

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Embodiment Construction

[0020] The present invention will be further described in detail below in conjunction with specific examples.

[0021] The present invention is to provide a preparation process for high-purity nickel ingots with low content of impurity elements, that is, electrolytic nickel plate selection and preparation--binding material--furnace loading--primary smelting of electron beam furnace-cooling-secondary smelting of electron beam furnace- - Cooling - Baking - Sampling analysis - Qualified products. The specific process technology plan is:

[0022] A kind of preparation of high-purity nickel ingot for semiconductor target, is characterized in that, comprises the following steps:

[0023] Step 1: Prepare materials, select electrolytic nickel plates with low content of iron, cobalt and copper, and the purity is ≥99.8%;

[0024] Step 2: Install the furnace, bind the electrolytic nickel plate and load the furnace, clean the furnace before loading the furnace, clean the reactor, ensure...

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Abstract

The invention provides a preparation technique of a high-purity nickel ingot low in impurity element content, namely a preparation technique of a high-purity nickel ingot for a semiconductor target. The preparation technique comprises the main steps that material preparation, charging and repeated smelting are conducted, specifically, an electron beam furnace is used for smelting, warming smelting starts to be conducted when the vacuum degree of a hearth is maintained to 1.0*10<2> Pa or below in the smelting process, the smelting temperature is controlled to 2130 DEG C or over, the smelting speed is controlled to 20.1 kg / h or below, and an electrolysis nickel board is fully molten; and the nickel ingot formed after smelting is cooled in the hearth for 6-12 h and then discharged out of the furnace. According to the preparation technique of the high-purity nickel ingot for the semiconductor target, parameters including the smelting speed, the smelting temperature, the smelting time and the like are selected according to the quantity of materials, electron beams are controlled to be distributed accurately in the smelting process, and thus the purity of metal and volatilizing removal of impurities can be controlled to the maximum extent; and high-purity metallic nickel is free of pores and inclusions and suitable for subsequent processing and using of the target.

Description

technical field [0001] The invention belongs to metal material smelting technology, relates to the preparation of nickel ingots, in particular to a preparation process of high-purity nickel ingots for semiconductor targets. technical field [0002] The invention belongs to metal material smelting technology, relates to the preparation of nickel ingots, in particular to a preparation process of high-purity nickel ingots for semiconductor targets. Background technique [0003] Nowadays, people have higher and higher requirements for the performance of electronic products, especially for the performance of display devices of electronic products, such as clear display, high sensitivity, reliable quality, small size, long-term use of equipment No fever etc. Especially to meet the requirements of clear display, it is inseparable from the development and application of high-performance target materials. Therefore, high-performance display devices are more dependent on high-pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B23/06C22B9/22
CPCC22B23/06C22B9/228
Inventor 李明阳韩伟东刘军
Owner 宝鸡一众有色金属材料有限公司
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