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49 results about "Electron-beam furnace" patented technology

An electron-beam furnace (EB furnace) is a type of vacuum furnace employing high-energy electron beam in vacuum as the means for delivery of heat to the material being melted. It is one of the electron-beam technologies.

Power control Method and power device in electronic optical circuit system of electronic bundle impact furnace

The invention discloses a method for controlling a power supply of an electron-optical circuit system of an electron beam furnace and a power supply device. The method takes the extraction value of an acceleration voltage sampling signal of a power supply of an electron beam generating system as a control signal for a focusing and deflection scanning power supply and the amplitude of a focusing and deflection scanning current changes linearly according to the control signal, which ensures that the operation parameter of the electron-optical circuit system is free from the influence of the fluctuation of the acceleration voltage. The power supply device has the acceleration voltage sampling signal connected with a square root extractor first and then connected to a focusing and deflection scanning power supply control circuit, and adopts a hysteresis-band current tracking pulse modulation controller to maintain a small up and down oscillation amplitude of a working current based on an expected value. An extraction value signal of the acceleration voltage sampling signal is used to control a focusing current, and a general control signal which is the produce of a deflection scanning integrated signal and the extraction value of the acceleration voltage sampling signal is used to control deflection scanning current, so the focusing and deflection scanning region of the electron beam is not influenced by the acceleration voltage, and in event of failure, the change of the focusing and deflection scanning region of the electron beam is controlled in a permitted range.
Owner:GUILIN UNIV OF ELECTRONIC TECH

Preparation technique of high-purity nickel ingot for semiconductor target

InactiveCN106399721ALow purityControlled Evaporation RemovalTemperature controlMaterials preparation
The invention provides a preparation technique of a high-purity nickel ingot low in impurity element content, namely a preparation technique of a high-purity nickel ingot for a semiconductor target. The preparation technique comprises the main steps that material preparation, charging and repeated smelting are conducted, specifically, an electron beam furnace is used for smelting, warming smelting starts to be conducted when the vacuum degree of a hearth is maintained to 1.0*10<2> Pa or below in the smelting process, the smelting temperature is controlled to 2130 DEG C or over, the smelting speed is controlled to 20.1 kg / h or below, and an electrolysis nickel board is fully molten; and the nickel ingot formed after smelting is cooled in the hearth for 6-12 h and then discharged out of the furnace. According to the preparation technique of the high-purity nickel ingot for the semiconductor target, parameters including the smelting speed, the smelting temperature, the smelting time and the like are selected according to the quantity of materials, electron beams are controlled to be distributed accurately in the smelting process, and thus the purity of metal and volatilizing removal of impurities can be controlled to the maximum extent; and high-purity metallic nickel is free of pores and inclusions and suitable for subsequent processing and using of the target.
Owner:宝鸡一众有色金属材料有限公司

Vacuum electron beam welding method of NbTi/Cu superconduction composite sheath

The invention discloses a vacuum electron beam welding method of a NbTi/Cu superconduction composite sheath. An upper cover, a lower cover, a oxygen-free copper sheath and a core rod of the NbTi/Cu multi-core superconduction composite sheath are cleaned and dried, the core rod is placed in the oxygen-free copper sheath to be assembled to obtain a sheath body, one end of an air extraction nozzle is inserted into a center hole of the cleaned upper cover to perform vacuum electron beam welding, the air extraction nozzle, the sheath body and the lower cover are placed together in a furnace chamber of a vacuum electron beam welder to perform vacuuming, the lower cover is tightly abutted, the sheath body is rotated at a uniform speed, eight-point positioning welding is performed on positions of combined gaps of the upper cover, the lower cover and the sheath body, primary vacuum electron beam sealing welding is performed, secondary sealing welding is performed, the welded superconduction composite sheath is subjected to vacuum cooling in the vacuum electron beam furnace chamber for one to eight hours, then the superconduction composite sheath is taken out of the furnace chamber, finally vacuuming deairing is performed, and the air extraction nozzle is subjected to cold welding and sealing welding after the deairing is finished. The process is stable, the welding quality is good, and the rate of finished products of obtained superconduction composite wires is high.
Owner:西部超导材料科技股份有限公司

Method for smelting and purifying backing material of monocrystalline pot by electron beams

The invention relates to a method for smelting and purifying backing material of a monocrystalline pot by electron beams. The method comprises the following steps of respectively charging the backing material of the monocrystalline pot into a material bin, a smelting crucible, a material delivery cart and five condensing crucibles; after material charging is completed, sucking vacuum out of an electron beam furnace, and preheating three electron guns when the vacuum degree is smaller than 0.5Pa; enabling the power of each of the three electron guns to continue to maintain for 250kW, and smelting silicon material; closing two electron guns which radiate to the smelting crucibles, pouring out the silicon liquid, and maintaining the power of the electronic gun radiating the condensing crucible to 250kW after the pouring is finished; finally, enabling the electron guns to maintain for 10min at the power of 250kW, 2min at the power of 200kW, 3min at the power of 150kW, 5min at the power of 120kW, 7min at the power of 100kW, 10min at the power of 80kW, 15min at the power of 50kW, 20min at the power of 30kW, and 25min at the power of 20kW, and condensing the electron beams at the power of 0kW. The method has the advantages that the metal impurities can be effectively removed, the removal rate reaches 98% or above, and the minority carrier lifetime in the produced polycrystalline cast ingot can be effectively prolonged; the condition is mild, and the operation is easy.
Owner:DALIAN UNIV OF TECH QINGDAO NEW ENERGY MATERIALS TECH RES INST CO LTD

Method for removing impurities on surface of metal silicon

The invention discloses a method for removing the impurities on the surface of polysilicon by using a composite corrosive and a magnetic separation method, belonging to the field of physical metallurgy. The method comprises the steps of: coarsely breaking, finely breaking, screening and magnetically separating the metal silicon raw material; putting in a container with stirring function, adding the corrosive; heating and stirring; recycling the filtrate; and washing, dehydrating and drying a filter cake to obtain impurity-removed polysilicon which can be used as furnace burden for other pyrometallurgical purification such as ingot casting purification and electron beam furnace purification and the like. By adopting a wet metallurgical method, the production cost for the impurity removal of pyrometallurgical equipment is greatly reduced, therefore, the method is a novel polysilicon wet metallurgical impurity removing method which can be industrially implemented on a large scale and has the characteristics of simple structure, low investment and low energy consumption. The metal impurities in the raw polysilicon are reduced from thousands of ppmw to below 200 ppmw without any selection and pre-purification. The method abandons the defects such as large power consumption and large equipment investment of the pyrometallurgical method, and a feasible novel way which can be industrially implemented on a large scale and has the characteristics of simple structure, low investment and low energy consumption is provided.
Owner:云南乾元光能产业有限公司

Automatic ingoting control system for vacuum electron beam furnace and control method of automatic ingoting control system

PendingCN109954855AExtended service lifeGuaranteed not to be wornAutomatic controlActuator
The invention discloses an automatic ingoting control system for a vacuum electron beam furnace and a control method of the automatic ingoting control system. The automatic ingoting control system includes an industrial control computer, a PLC, a servo motor actuator and an ingot pulling motor, wherein the industrial control computer is connected with the PLC through an industrial ethernet bus, the servo control communication port of the PLC is connected with the communication port of the servo motor actuator through the industrial ethernet bus, the motor power supply input port of the servo motor actuator is connected with a three-phase power grid through a filter, a contactor and an air switch, the servo motor actuator drives the ingot pulling motor, the data transfer port of a high-speed encoder mounted on the ingot pulling motor is connected with the feedback signal receiving port of the servo motor actuator, and an ingot rod is connected with an output shaft of the ingot pulling motor through a bearing. According to the automatic ingoting control system, automatic control is achieved in the entire process, manual interference is not needed, smoothness of the outer surface of an ingot metal after ingoting is guaranteed, the rate of finished products is high, the production efficiency is high, and the service life of a crucible is greatly prolonged.
Owner:GRIMAT ENG INST CO LTD

Method for producing high-purity metal vanadium ingot by three-step approach

The embodiment of the invention provides a method for producing a high-purity metal vanadium ingot through a three-step approach. According to the method, high-purity vanadium pentoxide and high-purity aluminum powder are used as raw materials; a vanadium-aluminum alloy containing about 90% of vanadium is produced by a vacuum aluminothermic method and argon protection; a horizontal electron beam smelting furnace is used for smelting to form a metal vanadium plate by adopting, and some impurities which are easy to remove are removed, such as aluminum, iron and chromium; an electron beam ingot furnace is used for continuous smelting to form a metal vanadium column ingot, and the impurities such as aluminum, iron, chromium and the like and difficult-to-remove impurities (silicon) are furtherremoved. According to the method provided by the invention, an electron beam ingot furnace smelting step is added after a horizontal electron beam furnace smelting step; after the metal vanadium plateis melt in an electron beam ingot furnace, and is dripped into an ingot casting crucible; the impurity elements sink or float upwards in the column ingot due to different specific gravities of the impurity elements and the metal vanadium, and finally the upper end and the lower end of the metal vanadium column ingot are removed so as to obtain the high-purity metal vanadium ingot of which the silicon content is less than 0.004% and the vanadium content is increased to 99.9% or above.
Owner:CNMC NINGXIA ORIENT GRP

Method for removing boron and metal impurities for polysilicon melting in electron-beam furnace

The invention relates to a method for removing boron and metal impurities for polysilicon purification, in particular to a method for removing boron and metal impurities for polysilicon melting in an electron-beam furnace. The method is characterized in that silicon briquettes as the raw materials firstly are subjected to acid pickling and washing, and are then placed in a high-temperature resistance furnace for high-temperature oxygenation pre-processing; the processed silicon materials are fed into a three-gun electron-beam furnace for melting; after the melting, the silicon ingots are taken out after the temperature is reduced to the room temperature; the skins and bottom layers are removed, the loose layer, where metal impurities are concentrated, of the core at the upper end of each silicon ingot is gently knocked off through a hard alloy hammer, and then solar polysilicon is obtained. The method provided by the invention is unique; through the adoption of the method, not only are phosphorus and metals such as calcium and sodium are removed, but also has very remarkable effects for removing boron and iron, copper and other metal impurities; the method has the advantages of high impurity removal efficiency, large yield and remarkable economic effects.
Owner:宁夏宁电光伏材料有限公司

Power device in electronic optical path system of electronic bundle impact furnace

The invention discloses a method for controlling a power supply of an electron-optical circuit system of an electron beam furnace and a power supply device. The method takes the extraction value of an acceleration voltage sampling signal of a power supply of an electron beam generating system as a control signal for a focusing and deflection scanning power supply and the amplitude of a focusing and deflection scanning current changes linearly according to the control signal, which ensures that the operation parameter of the electron-optical circuit system is free from the influence of the fluctuation of the acceleration voltage. The power supply device has the acceleration voltage sampling signal connected with a square root extractor first and then connected to a focusing and deflection scanning power supply control circuit, and adopts a hysteresis-band current tracking pulse modulation controller to maintain a small up and down oscillation amplitude of a working current based on an expected value. An extraction value signal of the acceleration voltage sampling signal is used to control a focusing current, and a general control signal which is the produce of a deflection scanning integrated signal and the extraction value of the acceleration voltage sampling signal is used to control deflection scanning current, so the focusing and deflection scanning region of the electron beam is not influenced by the acceleration voltage, and in event of failure, the change of the focusing and deflection scanning region of the electron beam is controlled in a permitted range.
Owner:GUILIN UNIV OF ELECTRONIC TECH
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