Method for removing impurities on surface of metal silicon

A metal silicon and impurity technology, applied in the direction of non-metallic elements, chemical instruments and methods, silicon compounds, etc., can solve the problems of large equipment investment and large power consumption, and achieve low energy consumption, small investment, and environmental friendliness

Inactive Publication Date: 2011-04-06
云南乾元光能产业有限公司
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Since most of the above researched and researched methods are pyrometallurgy, although pyrometallurgy can re

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing impurities on surface of metal silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038]1. The chemical composition of metal silicon ore is as follows (unit ppmw): Li0.07, Na0.04, Mg0.14, Al395, Ca15, Sc0.08, Ti86, V80, Cr4.2, Mn32, Fe697, Co4.1, Ni176, Cu8.5, Ge3.3, As0.04, Sr0.03, Y0.07, Zr1.8, Nb0.26, Mo6.7, Ba0.03, La1.8, Ce2.6, Pr0.5, Nd0.87, Sm0.04, Gd0.45, Tb0.05, Dy0.34, Ho0.03, Er0.23, Tm0.02, Yb0.007, Lu0.009, W1.8, Th0.20, U0. 13, that is: the total amount of impurities, that is, TM is 1441.3.

[0039] 2. Process conditions: Metal silicon raw materials are coarsely crushed to -3mm, and finely crushed to -40+200 mesh material is greater than 95%, sieved into three grades of +40 mesh, -40+200 mesh, and -200 mesh. Among them, +40 mesh returns to fine crushing, and the intermediate particle size enters wet magnetic separation. The concentration of the magnetic separation pulp is 35% to 40%, and the magnetic field strength is 12000 to 14000Oe. Corrosive agent, heated to 50 ° C, stirred for 8 hours. After the completion of filtration, the filtrate i...

Embodiment 2

[0041] 1. The chemical composition of metal silicon ore is as follows (unit ppmw): Li0.07, Na0.04, Mg0.14, Al395, Ca15, Sc0.08, Ti86, V80, Cr4.2, Mn32, Fe697, Co4.1, Ni176, Cu8.5, Ge3.3, As0.04, Sr0.03, Y0.07, Zr1.8, Nb0.26, Mo6.7, Ba0.03, La1.8, Ce2.6, Pr0.5, Nd0.87, Sm0.04, Gd0.45, Tb0.05, Dy0.34, Ho0.03, Er0.23, Tm0.02, Yb0.007, Lu0.009, W1.8, Th0.20, U0. 13, namely: TM is 1441.3.

[0042] 2. Process conditions: Metal silicon raw materials are coarsely crushed to -3mm, and finely crushed to -40+200 mesh material is greater than 95%, sieved into three grades of +40 mesh, -40+200 mesh, and -200 mesh. Among them, +40 mesh returns to fine crushing, and the intermediate particle size enters wet magnetic separation. The concentration of the magnetic separation pulp is 35% to 40%, and the magnetic field strength is 12000 to 14000Oe. Corrosive agent, heated to 60 ° C, stirred for 10 hours. After the completion of filtration, the filtrate is recycled, and the filter cake is washe...

Embodiment 3

[0044] 1. The chemical composition of metal silicon ore is as follows (unit ppmw): Li0.07, Na0.04, Mg0.14, Al395, Ca15, Sc0.08, Ti86, V80, Cr4.2, Mn32, Fe697, Co4.1, Ni176, Cu8.5, Ge3.3, As0.04, Sr0.03, Y0.07, Zr1.8, Nb0.26, Mo6.7, Ba0.03, La1.8, Ce2.6, Pr0.5, Nd0.87, Sm0.04, Gd0.45, Tb0.05, Dy0.34, Ho0.03, Er0.23, Tm0.02, Yb0.007, Lu0.009, W1.8, Th0.20, U0. 13, namely: TM is 1441.3.

[0045] 2. Process conditions: Metal silicon raw materials are coarsely crushed to -3mm, and finely crushed to -40+200 mesh material is greater than 95%, sieved into three grades of +40 mesh, -40+200 mesh, and -200 mesh. Among them, +40 mesh returns to fine crushing, and the intermediate particle size enters dry magnetic separation. After the magnetic field strength is 14000Oe, put it into a container with stirring, add a composite corrosive agent with a concentration of 20%, heat it to 80°C, and stir for 12 hours. After the completion of filtration, the filtrate is recycled, and the filter cak...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for removing the impurities on the surface of polysilicon by using a composite corrosive and a magnetic separation method, belonging to the field of physical metallurgy. The method comprises the steps of: coarsely breaking, finely breaking, screening and magnetically separating the metal silicon raw material; putting in a container with stirring function, adding the corrosive; heating and stirring; recycling the filtrate; and washing, dehydrating and drying a filter cake to obtain impurity-removed polysilicon which can be used as furnace burden for other pyrometallurgical purification such as ingot casting purification and electron beam furnace purification and the like. By adopting a wet metallurgical method, the production cost for the impurity removal of pyrometallurgical equipment is greatly reduced, therefore, the method is a novel polysilicon wet metallurgical impurity removing method which can be industrially implemented on a large scale and has the characteristics of simple structure, low investment and low energy consumption. The metal impurities in the raw polysilicon are reduced from thousands of ppmw to below 200 ppmw without any selection and pre-purification. The method abandons the defects such as large power consumption and large equipment investment of the pyrometallurgical method, and a feasible novel way which can be industrially implemented on a large scale and has the characteristics of simple structure, low investment and low energy consumption is provided.

Description

technical field [0001] The invention relates to a treatment method for comprehensively utilizing a composite etchant to remove impurities on the metal surface. In particular, it is a convenient separation method for effectively removing metal and other oxide impurities from the surface of bulk or powder metal silicon. The process has the advantages of short process, low cost, low equipment performance requirements, low equipment investment, and simple operation. It belongs to the field of physical metallurgy. Background technique [0002] Silicon guī (called silicon xī in Taiwan and Hong Kong) is a chemical element whose chemical symbol is Si, formerly known as silicon. Atomic number 14, relative atomic mass 28.09, there are two allotropes of amorphous silicon and crystalline silicon, belonging to the metalloid elements of Group IVA on the periodic table of elements. Silicon is also a very common element, but it rarely occurs in nature in the form of a single substance, b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/037
Inventor 李柏榆汪云华李海艳张济祥许金泉周金民王钟钰王春琴陈小番方来鹏付刚
Owner 云南乾元光能产业有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap