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Reflector and susceptor assembly for chemical vapor deposition reactor

A susceptor and reflector technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as reducing useful life

Inactive Publication Date: 2017-02-15
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, localized overheating along the length of the lamp, due to filament damage or blistering of the lamp's quartz, may reduce its useful life

Method used

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  • Reflector and susceptor assembly for chemical vapor deposition reactor
  • Reflector and susceptor assembly for chemical vapor deposition reactor
  • Reflector and susceptor assembly for chemical vapor deposition reactor

Examples

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Embodiment Construction

[0019] The present invention can be applied to a wide variety of possible reactors where uniformity of temperature rise of the substrate is important or highly desired, especially for producing uniform deposition of materials on such substrates. Although the examples given herein are CVD cold wall reactors in which the heater is in the form of an array of one or more wire lamps, other similar reactors are considered to be encompassed by the present invention. Improvements herein provide processing kits for radiatively heated susceptors in which one or more IR reflector elements compensate for non-uniform heating profiles from any type of heater employed by the reactor.

[0020] exist figure 1 In , a part of the cold wall reactor 11 supports the showerhead diffuser plate 101 and the showerhead assembly above the gas supply manifold 103 . One end of the reactor 11 can be seen on the right side of the figure, while the left hand side of the figure corresponds to the central part...

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PUM

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Abstract

A reactor for chemical vapor deposition is equipped with an IR radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear IR heater lamps arranged in a parallel array. A set of primary IR radiation reflectors beneath the lamps directs IR radiation back toward the susceptor in a pattern selected to provide uniform IR irradiation of the susceptor assembly to thereby uniformly heat the substrates. Secondary IR shield reflectors may be provided in selected patterns on the underside of the susceptor assembly as a fine tuning measure to direct IR radiation away from the assembly in a controlled pattern. The combined IR radiation reflectors have an IR signature that compensates for any non-uniform heating profile created by the linear IR heater lamp array. The heating profile of the lamp array might also be tailored in order to reduce the amount of compensation required to be supplied by the IR reflectors.

Description

technical field [0001] The present invention relates to semiconductor processing, and more particularly, to substrate heating for forming uniform thin films on substrates. Background technique [0002] In chemical vapor deposition (CVD) reactors, especially those used for epitaxial deposition, infrared (IR) heating lamps are used to heat the semiconductor substrate. The IR heat lamps are designed to heat semiconductor substrates up to 900 degrees Celsius. Compound semiconductor thin film deposition processes are extremely temperature sensitive, often requiring a deviation of plus or minus five degrees or less from the optimum processing temperature. In short, substrate temperature non-uniformity adversely affects film deposition quality and reactor throughput. In addition, it is preferable to maintain the desired uniformity throughout the process, including when slowly heating the temperature to the processing temperature and then cooling the substrate, in order to avoid d...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/48
CPCC23C16/4583C23C16/481H05B3/0047
Inventor 布莱恩·巴罗斯阿布里尔·卡布雷罗斯大卫·M·伊西卡瓦布莱恩·布朗亚历山大·勒纳
Owner 紫石能源有限公司
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