Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor

A technology of humidity sensitive sensor and graphene film, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of peeling off, easy expansion or contraction of the humidity sensing layer, etc., to improve adhesion, enhance interaction force, The effect of improving sensitivity

Active Publication Date: 2017-02-22
ZHEJIANG SCI-TECH UNIV
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, one of the serious disadvantages of these hydrophilic humidity-sensing materials is that when the humidity-sensing material is exposed to a high-humidity atmosphere for a long period of time, the humidity sensing layer tends to expand or shrink, resulting in easy peeling off from the substrate.
Moreover, the main challenge for the development of flexible sensors is not only the preparation of materials, but also their mechanical properties, electrical conductivity, and stability under repeated bending and stretching.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor
  • Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor
  • Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: a kind of preparation method of reduced graphene oxide film humidity sensor, comprises the following contents:

[0017] (1) The preparation method of graphene oxide is: slowly mix 270mL concentrated sulfuric acid / phosphoric acid mixed acid (H 2 SO 4 :H 3 PO 3 =9:1, V / V) was added dropwise to a beaker with 2g of natural graphite powder and kept stirring, then slowly added 12g of potassium permanganate, after mixing evenly, the beaker was transferred to a 50°C water bath for 12h. After the reaction was completed, 300 mL of ice water was added into the beaker, and after cooling to room temperature, 5 mL of 30% hydrogen peroxide was added dropwise to obtain a bright yellow product. Finally, the product was centrifuged and washed with hydrochloric acid and deionized water until pH = 6 at a rotation speed of 8000 rpm / min, and finally freeze-dried to obtain graphene oxide.

[0018] (2) The preparation method of reduced graphene oxide is as follows: measure 1....

Embodiment 2

[0026] Embodiment 2: In this embodiment, by changing the magnetron sputtering parameters, the effect of the gold electrode deposition on the sensor characteristics is studied.

[0027] Steps 1-5, 7 are the same as in Embodiment 1, and the magnetron sputtering parameters in step 6 are shown in Table 1-Table 6.

[0028] Table 1: Vacuum degrees of different backgrounds

[0029]

[0030] Note: The sputtering pressure is 1.0Pa, the sputtering power is 60W, the sputtering time is 7.5min, the target base distance is 50mm, and the gas flow rate is 23sccm.

[0031] Table 2: Different sputtering pressures

[0032]

[0033] Note: back vacuum 6.0-4.0×10 -4 Pa, the sputtering power is 60W, the sputtering time is 7.5min, the target base distance is 50mm, and the gas flow rate is 23sccm.

[0034] Table 3: Different sputtering power

[0035] Sputtering power 10W 30W 50W 60W 70W 90W 130W film integrity 5% 60% 85% 100% 95% 80% 50%

[0036] Note: back va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of an RGO (reduced graphene oxide) moisture-sensitive sensor. According to the preparation method, RGO is subjected to simple suction filtration film forming and then is transferred to a flexible PDMS (polydimethylsiloxane) substrate, a formed RGO film is plated with an interdigital electrode through magnetron sputtering, assembled on a breadboard and connected with internal and external leads, and the simple moisture-sensitive sensor is obtained. The moisture-sensitive sensor can be used for converting humidity signals into electric signals and can rapidly respond to respiratory behavior of a human body, thereby having great significance in detection of diseases of the respiratory system in the future. The preparation method of the RGO moisture-sensitive sensor adopts mild conditions and controllable technological parameters, is simple, easy, low in cost and high in repeatability and has broad application prospect.

Description

technical field [0001] The invention belongs to the field of reduced graphene oxide sensors, in particular to a method for preparing reduced graphene oxide graphite sensors by combining suction filtration technology, transfer printing technology and magnetron sputtering technology. The invention belongs to the technical field of advanced graphene sensor preparation. Background technique [0002] In recent years, graphene has attracted extensive attention as a sensing sensitive material due to its high mechanical strength, large specific surface area, high electron mobility and low manufacturing cost. However, graphene is generally prepared by cumbersome, complex and high-cost chemical vapor deposition methods, which is not conducive to large-scale application. Therefore, most researchers use graphene oxide to remove most of the oxygen-containing functional groups through a simple and efficient oxidation-reduction method to prepare reduced graphene oxide instead of graphene....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 刘爱萍钱巍王夏华居乐乐
Owner ZHEJIANG SCI-TECH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products