Multilayer antireflection coating of crystalline silicon cell and preparation method of multilayer antireflection coating

Abstract

The invention discloses a multilayer antireflection coating of a crystalline silicon cell. The multilayer antireflection coating deposits on an N-shaped side of the crystalline silicon cell and comprises a silicon oxide film, a first silicon nitride film, a second silicon nitride film, a third silicon nitride film, a fourth silicon nitride film and a zirconium dioxide barrier layer from bottom to top, wherein the silicon oxide film is 5-25 nanometers in thickness and 1.4-1.5 in refractive index, the first silicon nitride film is 6-12 nanometers in thickness and 2.25-2.35 in refractive index, the second silicon nitride film is 18-25 nanometers in thickness and 2.15-2.24 in refractive index, the third silicon nitride film is 35-55 nanometers in thickness and 2.05-2.14 in refractive index, the fourth silicon nitride film is 15-30 nanometers in thickness and 1.95-2.04 in refractive index, and the zirconium dioxide barrier layer is 30-50 nanometers in thickness. The multilayer antireflection coating of the crystalline silicon cell has the advantages of fast short wave response, low refractive index, excellent light permeability and the like.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a multilayer antireflection film for a crystalline silicon cell and a manufacturing method thereof. Background technique [0002] Potential-Induced Degradation (PID, Potential-Induced Degradation) is ubiquitous in traditional photovoltaic modules. According to the results of many domestic and foreign research institutions, the main reason for PID is: as the number of photovoltaic modules in series continues to increase, photovoltaic The probability that components will withstand high voltage-to-ground potential energy is also increasing. When one end of the system is grounded, the component farthest from the ground will generate a higher ground potential, which is close to 1000v in European design standards. Under such a high voltage, leakage current will be generated and power generation will be lost. The leakage current generally flows into the ground through the aluminum ...

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Problems solved by technology

In addition, the silicon nitride film is a gradient film, the difference in refractive index between the film layers is not obvious, the probability of total reflection is small, and a large part will escape from the silicon wafer.

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