Manufacturing method of array substrate for display device, etchant composition and etching method

Abstract

The present invention relates to a copper-based metal film etching liquid composition which includes (A) 5 to 30 weight percent of hydrogen peroxide (H2O2), (B) fluorine compound 0.01 to 3% by weight, (C) 0.01 to 3% by weight of 5- (alkyl of 1 to 5 carbon atoms) -1H-tetrazole, (D) 0.5 to 5% by weight of a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule, (E) 0.05 to 1% by weight of sulfate compound, (F) 1 to 5% by weight of polyhydric alcohol type surfactant, and (G) a residual amount of water with regard to the total weight of the composition, a method of manufacturing an array substrate for a display device using an etchant composition and an etching method. It is possible to provide a metal film etching liquid composition which can prevent step coverage failure and the incidence of etch residues.

Description

technical field [0001] The invention relates to a method for manufacturing an array substrate for a display device, a copper-based metal film etchant composition and an etching method. Background technique [0002] The process of forming metal wiring on a substrate in a semiconductor device generally includes steps utilizing the following processes: a metal film formation process by sputtering, etc.; photoresist coating, exposure, and development in selective areas A resist formation process; and an etching process, including cleaning processes before and after individual unit processes, and the like. The above-mentioned etching step refers to a step of leaving a metal film in a selective region using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. [0003] In such a semiconductor device, in recent years, resistance of metal wiring has become a major concern. This is because resistance is the...

AI Technical Summary

Problems solved by technology

However, in the case of etching liquid compositions for copper-based metal films, although many types are currently used, the actual situation is that they cannot satisfy the performance required by users.

As an example, Korean Laid-Open Patent No. 10-2010-0090538 discloses an etchant composition for a copper-based metal film, which contains a certain amount of hydrogen peroxide, an organic acid, a phosphate compound, a water-soluble cyclic Amine compounds, water-soluble compounds having nitrogen atoms and carboxyl groups in one molecule, fluorine-containing compounds, polyol-type surfactants, and water, but the composition is not effective in side etch regulation and in etching of thick-film metal layers (Cu). There is a limitation in maintaining the etching rate according to the number of sheets processed