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A kind of preparation method of organic optoelectronic device

A technology for optoelectronic devices and organic light-emitting layers, applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve problems such as affecting device performance, device performance degradation, etching, etc., to achieve uniform electric field distribution and improve performance. , to avoid the effect of uneven edges and burrs

Active Publication Date: 2019-07-09
SHAANXI UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the preparation of organic photoelectric devices needs to pattern the conductive substrate first. The patterning methods include two wet methods and dry methods. The wet method mainly uses corrosive solutions such as acids. Because this method involves chemicals, it is harmful to the environment. Both will have an impact, and wet etching will also cause irregular etching defects on the edge of the etching, which will significantly reduce the performance of the prepared organic electroluminescent device
In addition, dry etching is currently more common to use laser etching. Using laser etching to etch the conductive substrate will cause fringe in the etched area, and the high fringe height will cause the edge of the device. Light emission will greatly reduce the performance of the device. If the height is controlled below 5nm, there will be no edge luminescence, but the height of the melting will also change the electric field distribution of the organic optoelectronic device, thereby affecting the performance of the entire device. At present, the industry and There is no effective solution to this problem in academia

Method used

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  • A kind of preparation method of organic optoelectronic device
  • A kind of preparation method of organic optoelectronic device
  • A kind of preparation method of organic optoelectronic device

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preparation example Construction

[0022] refer to figure 1 , the organic photoelectric device preparation method of the present invention comprises the following steps:

[0023] 1) Prepare a mask plate, and prepare a conductive layer 2 on the substrate 1, then cover the mask plate on the conductive layer 2, then deposit an insulating layer 3 on the conductive layer 2, remove the mask plate, and place the mask plate on the conductive layer 2 Form a conductive region on the conductive region, and then deposit an organic light-emitting layer 4 on the middle of the conductive region and the insulating layer 3;

[0024] 2) Deposit a number of cathode electrodes 5 on the organic light-emitting layer 4, and deposit anode electrodes 6 on both ends of the two strip-shaped conductive regions, to obtain an organic photoelectric device.

[0025] The substrate 1 is a rigid substrate or a flexible substrate.

[0026] The conductive layer 2 is an ITO layer, a silver nanowire layer, a metal grid layer, a graphene layer or a...

Embodiment 1

[0033] The ITO glass substrate 1 that has been wet-etched and the ITO substrate 1 that has not been etched are ultrasonically cleaned with acetone, ethanol and distilled water, rinsed with distilled water, and dried. Transfer the substrate 1 to the vacuum thermal evaporation chamber, and thermally sublimate and evaporate HAT-CN with a thickness of 10nm, NPB with a thickness of 75nm, and Alq with a thickness of 60nm on the ITO substrate 1. 3 And Liq with a thickness of 2nm; finally thermal sublimation evaporated aluminum 150nm to form the cathode. Effect of deposition rate on NPB and Alq 3 Keep it at 2 angstroms / s, keep it at 0.5 angstroms / s for HAT-CN and Liq, keep it at 8 angstroms / s for aluminum, and finally form the device structure as follows:

[0034] ITO (substrate 1 with wet etching and substrate 1 without any etching) / HAT-CN(10nm) / NPB(75nm) / Alq 3 (60nm) / Liq(2nm) / Al(150nm).

[0035] Among them, HAT-CN is the hole injection layer, NPB is the hole transport layer, Alq ...

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Abstract

The invention discloses a method for preparing an organic photoelectric device, which comprises the following steps: 1) preparing a mask plate, preparing a conductive layer on a substrate, covering the mask plate on the conductive layer, and depositing an insulating layer on the conductive layer , remove the mask plate, form two strip-shaped conductive regions on the conductive layer, and then deposit an organic light-emitting layer on the middle part of the two strip-shaped conductive regions and the insulating layer; 2) deposit a number of negative electrodes on the organic light-emitting layer, An anode electrode is respectively deposited on both ends of the two strip-shaped conductive regions to obtain an organic photoelectric device. This method can effectively improve the performance of the organic photoelectric device while avoiding etching the conductive substrate.

Description

technical field [0001] The invention belongs to the technical field of photoelectric device preparation, and relates to a preparation method of an organic photoelectric device. Background technique [0002] At present, the preparation of organic photoelectric devices needs to pattern the conductive substrate first. The patterning methods include two wet methods and dry methods. The wet method mainly uses corrosive solutions such as acids. Because this method involves chemicals, it is harmful to the environment. At the same time, wet etching will also cause irregular etching defects on the edge of etching, which will obviously reduce the performance of the prepared organic electroluminescent device. In addition, dry etching is currently more common to use laser etching. Using laser etching to etch the conductive substrate will cause fringe in the etched area, and the high fringe height will cause the edge of the device. Light emission will greatly reduce the performance of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/20H10K30/00Y02E10/549Y02P70/50
Inventor 丁磊
Owner SHAANXI UNIV OF SCI & TECH