X ray sensor and manufacturing method thereof

Abstract

The invention discloses an X ray sensor which comprises an intrinsic semiconductor layer with a first surface and a second surface opposite to the first surface, a first doped region at the first surface of the intrinsic semiconductor layer and a doped ring which surrounds the first doped region, a second doped region at the second surface of the intrinsic semiconductor layer, and an electrode layer on the first doped region, wherein the first doped region and the doped ring have the same type of doping, the doping type of the second doped region is different from that of the first doped region. According to the sensor, the signal crosstalk between sensor pixel units can be effectively suppressed, and the breakdown voltage of the pixel units is improved at the same time.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to an X-ray sensor and a manufacturing method thereof. Background technique [0002] An X-ray detector is a device that converts X-ray energy into electrical signals that can be recorded. After the X-ray light source is focused, the X-rays that pass through the sample to be tested are converted into electrical signals that can be recorded by the X-ray sensor. , followed by signal processing for imaging. [0003] At present, the detectors of semiconductor devices have been widely used due to their small size, fast speed, convenient information processing and flexible design, and have become the mainstream of the detector market. Silicon-based pixel detector is a commonly used X-ray sensor at present. It mainly includes a pixel array of PIN diode devices. The electrode of the sensor pixel unit and the reading chip are packaged through an indium column to form a silicon-based dete...

AI Technical Summary

Problems solved by technology

Silicon-based pixel detector is a commonly used X-ray sensor at present. It mainly includes a pixel array of PIN diode devices. The electrode of the sensor pixel unit and the reading chip are packaged through an indium column to form a silicon-based detector. This detector has high Spatial resolution, fast response capability and high time resolution capability, however, there is signal crosstalk between the pixel units of the sensor, which affects the performance of the sensor

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