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Correction apparatus and correction method for dynamic balance of integrated rotary structure

A rotating structure, integrated technology, applied in the direction of photolithography process exposure device, microlithography exposure equipment, etc., can solve the problem of low power of extreme ultraviolet light, can not meet the requirements of production, etc., to improve the power size and power stability The effect of uniformity and mass distribution

Active Publication Date: 2017-03-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the power of the extreme ultraviolet light produced by the existing extreme ultraviolet light source is still small, which cannot meet the production requirements

Method used

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  • Correction apparatus and correction method for dynamic balance of integrated rotary structure
  • Correction apparatus and correction method for dynamic balance of integrated rotary structure
  • Correction apparatus and correction method for dynamic balance of integrated rotary structure

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Embodiment Construction

[0055] As mentioned in the background technology, the power of the extreme ultraviolet light generated by the existing extreme ultraviolet light source is still small (about 10-30W), but in the actual photolithography process, the power of the light source needs to reach 250W, the existing The extreme ultraviolet light source produced by the extreme ultraviolet light source cannot meet the requirements of actual production.

[0056] The study found that the tin droplet nozzle of the existing extreme ultraviolet light source controls the spraying of tin droplets in a mechanical way, so that adjacent tin droplets are separated in space, and the laser beam can bombard each tin droplet. Each tin drop forms plasma when it is bombarded, and the plasma radiation produces extreme ultraviolet light. If the distance between two tin drops is too close or the two tin drops stick together, when the laser beam is bombarding the current tin drop, a The plasma debris will affect the next drop...

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PUM

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Abstract

The invention discloses a correction apparatus and a correction method for dynamic balance of an integrated rotary structure. The correction method comprises the steps of providing the integrated rotary structure, wherein the integrated rotary structure comprises a collecting lens, and the collecting lens comprises an inwardly-concave first surface and an opposite second surface; enabling the integrated rotary structure to rotate; performing a measurement step on dynamic balance offset values to obtain corresponding dynamic balance offset values at different positions on the second surface when the integrated rotary structure rotates for at least one circle; performing an acquisition step of to-be-bombarded positions to obtain a to-be-bombarded position on the second surface corresponding to the maximum dynamic balance offset value; and performing a bombardment step, carrying out bombarding on the second surface of the collecting lens corresponding to the to-be-bombarded position by laser beams to remove a part of the collecting lens material. The correction method provided by the invention is used for collecting the dynamic balance of the integrated rotary structure, and the stability of an EUV light source is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a correction device and a correction method for the dynamic balance of an integrated rotating structure. Background technique [0002] Photolithography is an important step in the manufacturing process of semiconductor devices. This step is to form a photolithographic pattern in a photoresist layer by using an exposure process and a development process. However, with the continuous improvement of chip integration, this requires the continuous reduction of the feature size of lithography. [0003] The resolution (R) of the exposure device determines the minimum feature size of lithography, and the resolution (R) of the exposure system satisfies the relation: R=kλ / (NA), where k is a coefficient related to the exposure process, and λ is the exposure The wavelength of the light source, NA is the numerical aperture of the optical system of the exposure device. It can be se...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 岳力挽伍强
Owner SEMICON MFG INT (SHANGHAI) CORP