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A kind of preparation method of conductive thin film

A technology of conductive film and alloy film, applied in cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., can solve problems such as affecting conductive performance, and achieve the effect of enhancing conductivity, small product thickness, and small thickness

Inactive Publication Date: 2018-06-26
NANTONG SHENGZHOU ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, when the above-mentioned invention patent removes the nickel layer, because it uses a weak acid cleaning process, it is easy to clean the surface layer of the graphene film, thereby affecting the overall electrical conductivity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A kind of preparation method of conductive thin film, comprises the following steps:

[0028] A, at least three layers of nickel-phosphorus alloy film layers are deposited by arc plasma plating on the glass substrate;

[0029] B, adopt vacuum evaporation to deposit graphene film layer on nickel-phosphorus alloy film layer;

[0030] C, put the product of step B into deionized water and let it stand for at least 30 minutes;

[0031] D. Take it out of the deionized water and dry it at 180°C~260°C;

[0032] E. After drying, put the product into the reaction kettle, add 2,2'-azobisisobutamidine dihydrogen chloride, graphene and dispersant; wash after stirring for 4 hours, vacuum dry, and refrigerate for 60 minutes;

[0033] F. Take out the refrigerated product and perform ultrasonic cleaning for at least 60 minutes.

[0034] G, take out the product after ultrasonic cleaning, and plate palladium nickel on its surface.

[0035] The present invention changes the conductivit...

Embodiment 2

[0037] A kind of preparation method of conductive thin film, comprises the following steps:

[0038] A, at least three layers of nickel-phosphorus alloy film layers are deposited by arc plasma plating on the glass substrate;

[0039] B, adopt vacuum evaporation to deposit graphene film layer on nickel-phosphorus alloy film layer;

[0040] C, put the product of step B into deionized water and let it stand for at least 30 minutes;

[0041] D. Take it out of the deionized water and dry it at 180°C~260°C;

[0042] E. After drying, put the product into the reaction kettle, add 2,2'-azobisisobutamidine dihydrogen chloride, graphene and dispersant; wash after stirring for 4 hours, vacuum dry, and refrigerate for 60 minutes;

[0043] F. Take out the refrigerated product and perform ultrasonic cleaning for at least 60 minutes.

[0044] G, take out the product after ultrasonic cleaning, and plate palladium nickel on its surface.

[0045] The substrate used in the vacuum evaporation ...

Embodiment 3

[0049] A kind of preparation method of conductive thin film, comprises the following steps:

[0050] A, at least three layers of nickel-phosphorus alloy film layers are deposited by arc plasma plating on the glass substrate;

[0051] B, adopt vacuum evaporation to deposit graphene film layer on nickel-phosphorus alloy film layer;

[0052] C, put the product of step B into deionized water and let it stand for at least 30 minutes;

[0053] D. Take it out of the deionized water and dry it at 180°C~260°C;

[0054] E. After drying, put the product into the reaction kettle, add 2,2'-azobisisobutamidine dihydrogen chloride, graphene and dispersant; wash after stirring for 4 hours, vacuum dry, and refrigerate for 60 minutes;

[0055] F. Take out the refrigerated product and perform ultrasonic cleaning for at least 60 minutes.

[0056] G, take out the product after ultrasonic cleaning, and plate palladium nickel on its surface.

[0057] The conductivity of the deionized water is le...

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Abstract

The invention discloses a method for preparing a conductive thin film. The method comprises changing the conductivity of a glass substrate by adding a nickel-plated phosphorus alloy layer and a graphene film layer; taking out ions on the surface to prevent the ions against electrostatic adsorption; enhancing the conductivity for the third time by means of 2, 2'-Azobisisobutyramidine hydrogen dichloride, graphene and dispersant, ultrasonically removing surface impurities, and then performing surface palladium nickel plating to enhance the conductivity for the fourth time. The method processes the glass substrate to enhance its conductivity by the four layers for the first time, removes the impurities in a moderate way, and does not affect the surface.

Description

technical field [0001] The invention belongs to the technical field of composite materials, and in particular relates to a preparation method of a conductive thin film. Background technique [0002] Graphene materials have the characteristics of ultra-thin, super-strength, high specific surface area, high thermal conductivity, high transparency, super-carrier mobility, and flexibility, and have broad application prospects and potential. [0003] The conventional preparation process of graphene conductive film is based on the growth of nickel or copper as the substrate, so it needs to be transferred to other substrates through lift-off and transfer technology. However, after expanding to a certain area, the nickel or copper substrate will become larger and the cost will increase; especially in the problem of film layer transfer with a larger area, it is difficult to break through the technology. [0004] The application number is CN201510227685.8, and the name is the inventi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B5/14H01B13/00
Inventor 盛健
Owner NANTONG SHENGZHOU ELECTRONICS TECH CO LTD
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