Quantum dot light-emitting layer and device and preparation method, light-emitting module and display device

A quantum dot luminescence and quantum dot technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of uneven luminescence, low performance, and uneven thickness of the device, so as to improve the uniformity and stability of luminescence and improve the luminescence Efficiency and luminous life, the effect of film stability

Active Publication Date: 2019-10-11
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot cross-linked light-emitting layer and QLED device and its preparation method, a light-emitting module and a display device, aiming to solve the problems of uneven coverage and thickness of the existing quantum dot film layer. Inhomogeneity, and the problem of uneven light emission and lower performance of the device

Method used

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  • Quantum dot light-emitting layer and device and preparation method, light-emitting module and display device
  • Quantum dot light-emitting layer and device and preparation method, light-emitting module and display device
  • Quantum dot light-emitting layer and device and preparation method, light-emitting module and display device

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Experimental program
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Effect test

Embodiment 1

[0066] The preparation steps of the QLED device are as follows:

[0067] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0068] Spin-coat a layer of PVK on the PEDOT:PSS layer as a hole transport layer;

[0069] Spin-coat a layer of CdSe@ZnS coated with mercaptopropionic acid (MPA) ligands on the PVK layer as the quantum dot light-emitting layer;

[0070] Next, the above-prepared CdSe@ZnS layer coated with mercaptopropionic acid (MPA) ligands was placed in a vacuum cavity, and trimethylaluminum ((CH 3 ) 3 Al) gas, where the internal pressure of the cavity is 0.05 mbar, the partial pressure of trimethylaluminum gas is 0.01 mbar, the internal temperature of the cavity is 16 °C, and the processing time is 5 min. Take it out after the processing to obtain the cross-linked quantum dots luminous layer;

[0071] Then, spin-coat one layer of ZnO on the quantum dot cross-linked luminescent layer prepared above as an electron transport la...

Embodiment 2

[0074] The preparation steps of the QLED device are as follows:

[0075] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0076] Spin-coat a TFB layer on the PEDOT:PSS layer as a hole transport layer;

[0077] Spin-coat a layer of CdSe@ZnS coated with mercaptopropionic acid (MPA) ligands on the TFB layer as the quantum dot light-emitting layer;

[0078] Next, the above-prepared CdSe@ZnS layer coated with mercaptopropionic acid (MPA) ligands was placed in a vacuum cavity, and trimethylaluminum ((CH 3 ) 3 Al) gas, where the internal pressure of the cavity is 0.05 mbar, the partial pressure of trimethylaluminum gas is 0.02 mbar, the internal temperature of the cavity is 18 °C, and the processing time is 10 min. Take it out after processing to obtain quantum dot crosslinking luminous layer;

[0079] Then, spin-coat one layer of ZnO on the quantum dot cross-linked luminescent layer prepared above as an electron transport layer;

[00...

Embodiment 3

[0082] The preparation steps of the QLED device are as follows:

[0083] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0084] A layer of TFB was spin-coated on the PEDOT:PSS layer as a hole transport layer;

[0085] Spin-coat a layer of CdSe@ZnS coated with oleic acid (OA) ligand on the TFB layer as the quantum dot light-emitting layer;

[0086] Next, the above-prepared CdSe@ZnS layer coated with oleic acid (OA) ligands was placed in a vacuum chamber, and triethylaluminum ((CH 3 CH 2 ) 3 Al) gas, where the internal pressure of the cavity is 0.05 mbar, the partial pressure of triethylaluminum gas is 0.01 mbar, the internal temperature of the cavity is 18 °C, and the processing time is 20 min. Take it out after processing to obtain quantum dot crosslinking luminous layer;

[0087] Then, spin-coat one layer of ZnO on the quantum dot cross-linked luminescent layer prepared above as an electron transport layer;

[0088] Finally, ...

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Abstract

Disclosed are a quantum dot light-emitting layer and component, a manufacturing method, a light-emitting module, and a display device. The method comprises the steps of: dissolving quantum dots coated on the surface thereof with a ligand into a solvent to produce a quantum dot solution; employing a solution method to deposit the quantum dot solution on a substrate or a functional layer to produce a quantum dot light-emitting layer; placing the quantum dot light-emitting layer in a vacuum chamber, introducing an organic metal complex, treating for 0.5-30 min, where the internal pressure of the chamber is 0.01-1 mbar, the partial pressure of the organic metal complex when gasified is 0.001-0.1 mbar, and the internal temperature of the chamber is 10-25 °C; and retrieving the treated quantum dot light-emitting layer to produce a quantum dot cross-linked light-emitting layer. A quantum dot thin film of the present invention not only is even and flat, but also has a stable film layer that is not prone to being re-dissolved or flushed away by a solvent in subsequent deposition of another functional layer, thus effectively increasing the evenness and stability of light emission of a QLED.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a quantum dot cross-linked light-emitting layer, a QLED device, a preparation method, a light-emitting module, and a display device. Background technique [0002] Quantum dots (Quantum dots, QDs), also known as semiconductor nanocrystals (Semiconductor nanocrystals), are semiconductor nanoparticles with a particle radius smaller than or close to the exciton Bohr radius, which have various unique optical properties, such as band gap The width is easy to tune, the absorption spectrum is wide, the spectral purity is high, and the optical / chemical performance is stable. Quantum dot light-emitting diodes (QLEDs) based on quantum dots are called quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs). Compared with traditional light-emitting diodes and OLEDs, QLED has outstanding advantages such as high color purity, good stability, long life, good c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/26H01L33/00
Inventor 梁柱荣曹蔚然
Owner TCL CORPORATION
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