Photoresist compositions and methods

A technology of photoresist and composition, applied in the field of chemical amplification material, negative tone development, photoresist composition and photolithography, can solve problems such as missing contact holes and pattern collapse

Active Publication Date: 2017-04-05
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Consequently, the pattern profile will exhibit an undesirable T-top shape, there may be pattern collapse

Method used

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  • Photoresist compositions and methods
  • Photoresist compositions and methods
  • Photoresist compositions and methods

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0100] Example 1: Synthesis of Monomer A

[0101]

[0102] Solution: Monomer A

[0103] A round bottom flask was charged with n-octylamine (10.0 g, 0.07743 mol) and ethylene carbonate (6.883 g, 0.0782 mol). The mixture was stirred at 100°C for 2 hours. The reaction mixture was cooled to room temperature and filtered. 16.3 g of product (starting material I) are obtained.

[0104] In a round bottom flask, starting material I (10.0 g, 0.0461 mol) and triethylamine (19.24 mL, 0.138 mol) were dissolved in 100 mL of anhydrous dichloromethane under nitrogen atmosphere. Methacryloyl chloride (5.82 mL, 0.0599 mol) was added dropwise at 0°C. The reaction mixture was allowed to warm slowly to room temperature and stirred at this temperature for 3 hours.

[0105] The reaction mixture was transferred to 100 mL deionized water, and the organic phase was washed with NH 4 Cl aqueous solution and deionized water were washed successively. The collected organic solutions were dried ove...

example 2

[0106] Example 2: Synthesis of Monomer B

[0107]

[0108] Solution: Monomer B

[0109]In a round bottom flask, 1-(tert-butoxycarbonyl)-4-piperidone (15.00 g, 0.0753 mmol) was dissolved in 300 mL of ether under nitrogen atmosphere. The resulting solution was cooled to -40°C and a 3M solution of ethylmagnesium bromide (32.64 mL, 0.0979 mmol) in diethyl ether was added. The reaction was stirred at -30-40°C for 30 minutes, then slowly warmed to room temperature and stirred for an additional 6 hours. by slowly adding H 2 O quenched the reaction and the resulting mixture was transferred to 200 mL deionized water, and the organic phase was washed with saturated NH 4 Cl was washed and the organic phase was washed with saturated NH 4 Cl and deionized water were washed successively. The collected organic solutions were dried over sodium sulfate, filtered and concentrated in vacuo. 12.2 g of product (starting material II) are obtained.

[0110] In a round bottom flask, startin...

example 3

[0112] Example 3: Synthesis of Polymer B

[0113]

[0114] Scheme: Polymer B

[0115] In a round bottom flask, a series of monomers nBMA (2.85g), iBMA (15.17g) and TBPEMA (1.98g) were dissolved in 16.333g PGMEA with stirring at room temperature and degassed with nitrogen for 20 minutes. PGMEA (30.333 g) was fed into a Julabo reactor equipped with condenser and mechanical stirrer. After degassing with nitrogen for 20 minutes. The solvent in the Eulab reactor was heated to 80 °C. In another round bottom flask, initiator V601 (3.64 g) was dissolved in 5.47 g PGMEA and degassed with nitrogen for 20 minutes. The initiator solution was slowly added to the Ulab reactor and stirred for 15 minutes, and the monomer solution was fed dropwise into the Ulab reactor under a nitrogen atmosphere under strict stirring for 3 hours. After the monomer feed was complete, the reaction mixture was stirred at 80 °C for one hour. The reaction mixture was cooled to room temperature to achieve a...

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PUM

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Abstract

New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Description

Background technique [0001] The present invention generally relates to the manufacture of electronic devices. More specifically, the present invention relates to photoresist compositions and photolithographic methods that allow the formation of fine patterns using negative tone development methods. [0002] Photoresist is a photosensitive film used to transfer an image to a substrate. A photoresist coating is formed on the substrate and the photoresist layer is then exposed to a source of activating radiation through a photomask. After exposure, the photoresist is developed, resulting in a relief image that allows selective processing of the substrate. [0003] Much work has been done to extend the practical resolution capabilities of positive tone resist development, including in immersion lithography. One such example involves the negative tone development (NTD) of a conventional positive tone chemically amplified photoresist using a specific developer (typically an organ...

Claims

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Application Information

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IPC IPC(8): G03F7/038G03F7/00
CPCG03F7/0035G03F7/038C08F220/343G03F7/0397G03F7/2041C07D211/48G03F7/0045G03F7/325C08L75/04G03F1/76G03F7/0002G03F7/004G03F7/0382C08F220/26C08F220/365C07C271/12G03F7/162G03F7/20G03F7/40
Inventor M-K·张E-H·柳洪昌英D-Y·金
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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