Bootstrap diode structure based on P-type substrate and manufacturing process

Abstract

The invention discloses an integrated circuit structure which comprises an electronic switch, a resistor module and a semiconductor structure on the P-type substrate, wherein the semiconductor structure has a junction type field effect transistor arranged therein. Turning on / off of the junction type field effect transistor in the semiconductor structure is controlled by the electronic switch and other parts of the semiconductor structure, thereby realizing same function with a bootstrap diode in a grid driving circuit. The invention further discloses a manufacturing process of the integrated circuit structure. The process can be simply integrated in a chip process without increasing extra process steps, and production is easy.

Description

technical field [0001] The invention relates to an integrated circuit structure and a manufacturing process thereof, in particular to a semiconductor device structure based on a P-type substrate and having the same function as a bootstrap diode and a manufacturing process thereof. Background technique [0002] Such as figure 1 When the MOS tube of the half-bridge is driven, it is generally the timing sequence that the upper tube and the lower tube are turned on in turn; when the upper tube is turned off and the lower tube is turned on, the potential of Vs is the common terminal potential (generally 0), The potential of the drain (Drain terminal) of Q1 is HV (such as 600V). At this time, Vcc is charged to Cbs through Dbs. After being fully charged, Cbs provides a driving voltage Vg1=Vcc (such as 20V) for the upper tube driver (Drv1). The control terminal signal Control the switch of Q1; when the upper tube is turned on and the lower tube is turned off, the potential of the V...

AI Technical Summary

Problems solved by technology

[0005] The use of external bootstrap diodes needs to increase the connection of peripheral circuits, which reduces the reliability and increases the overall cost;

[0006] If the diode is directly integrated on the bulk silicon material, due to the reverse recovery characteristics of the diode, there will be a large number of minority carriers (minority carriers) in the reverse direction, which will generate a minority carrier current and destroy the circuit timing; so it is necessary to use SOI (Silicon On Insulator Silicon-on-insulator structure) process isolation can directly integrate diodes, but in this case, the process is complicated and the cost is high;

[0007] A chip with a bootstrap diode structure that uses an integrated Charge Pump+integrated high-voltage MOSFET structure requires a special MOSFET process, such as a thick gate oxide process (double gate oxide process), and the production of a Charge Pump requires a large chip area, increasing the number of chips cost

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