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Metal coating for thin-film components, method for its manufacture and sputtering target

A metal coating and sputtering target technology, which is applied in metal material coating process, semiconductor/solid-state device manufacturing, conductive layer on insulating carrier, etc., to achieve the effect of maintaining suitability, improving etching performance, and suppressing undesired reactions

Active Publication Date: 2019-10-22
PLANSEE SE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the binary system has the disadvantage that a customized combination of desired properties can only be set to a limited extent

Method used

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  • Metal coating for thin-film components, method for its manufacture and sputtering target
  • Metal coating for thin-film components, method for its manufacture and sputtering target
  • Metal coating for thin-film components, method for its manufacture and sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0107] In the embodiment of the present invention, construct such as figure 2 Thin film components shown in a.

[0108] In a series of experiments, different metal coatings with different chemical compositions were fabricated consisting of Mo-based alloy layers. Layers were deposited from sputtering targets consisting of pure molybdenum, pure aluminum, pure titanium, and Mo-based alloys containing 10 atomic % Ti and 20 atomic % Ti. Al and Ti-containing layers composed of Mo-based alloys were produced by co-sputtering 2 or 3 different sputtering targets. Here, the chemical composition of the layer is varied by combining different sputtering targets and the sputtering power applied to the sputtering targets. The chemical composition of the fabricated layers is shown in Table 1.

[0109] In order to determine the suitability of layers composed of Mo-based alloys as overlays, a glass base layer (Corning Eagle 50×50×0.7mm 3 ) was coated with a layer composed of Mo-based allo...

Embodiment approach

[0115]

[0116]

[0117] After the oxidation resistance test and after the corrosion resistance test, the specific resistance of the layers and of the reference material was measured in the initial state. choose as figure 2 a shows the structure in order to enable extremely accurate measurements of the specific resistance. In each case, the deposited layer thickness was 300 nm. Measurements were taken using the 4-point method using a 4-point measuring head commercially available from Jandel and a Keithley SourceMeter. Here, a constant current of 10 mA was applied and the drop in voltage was measured. From this the specific resistance within the layer thickness is calculated. Take the average of 6 measurement points for each sample. The results are summarized in Table 2. The oxidation resistance test does not significantly affect the conductivity (specific resistance) of the layers examined. However, highly corroded samples (corrosion resistance test) have inhomoge...

Embodiment 2

[0126] In a series of experiments, alloys containing 20 at% Al and 5 at% Ti (MoAlTi 20-5), 25 at% Al and 5 at% Ti (MoAlTi 25-5), and 25 at% Al and 10 at% Ti were fabricated. (MoAlTi 25-10) metal coating of layers composed of Mo-based alloys. Layers are deposited from sputtering targets with corresponding chemical compositions. To determine the suitability of a layer composed of a Mo-based alloy as a diffusion barrier against Si, a Si wafer (3 inches in diameter, 380 μm thick) was coated with a layer composed of a Mo-based alloy (layer 3, see figure 2 c) Corresponding layers of composition and Cu layer in each case (metal layer 4, see figure 2 c) coating. choose as figure 2 The structure shown in c, because the extra layer can obstruct the inspection of the Cu layer. The layer thickness of the layer composed of the Mo-based alloy was 50 nm, and the layer thickness of the Cu layer was 200 nm.

[0127] To test the suitability of layers consisting of Mo-based alloys as dif...

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Abstract

The invention relates to a metal coating for thin-film components and to a method for producing the metal coating. The invention furthermore relates to a sputtering target composed of a Mo-based alloy containing Al as well as Ti and customary impurities and a method for producing a sputtering target composed of a Mo-based alloy.

Description

technical field [0001] The invention relates to a metal coating of a thin-film component and to a method for producing the metal coating. The present invention also relates to a sputtering target composed of Mo-based alloy and a method for manufacturing the sputtering target composed of Mo-based alloy. Background technique [0002] Metallic coatings for thin-film components can be produced by sputtering from suitable sputtering targets. Sputtering, also known as cathode atomization, is a physical method by which atoms are separated from a sputtering target and transformed into a gas phase by the impact of energetic ions. [0003] Metallic coatings for thin-film components can be, for example, conductive strips and electrodes (such as source, drain, and gate electrodes in a thin-film transistor (TFT)) and are used in many electrical and electronic devices, such as liquid crystal displays ( liquid crystal display; LCD) or organic light-emitting diode (organic light-emitting ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/04C23C14/34C23C24/04H01L23/532
CPCC23C14/14C23C14/34C23C14/58C22C1/045C23C14/3414C23C24/04H01L23/53223H01L23/53252H01L23/53238C22C27/04H01B1/023C23C14/16H01L21/02697H01L21/28061H01B1/026H01B5/14
Inventor 哈拉尔德·科斯滕鲍尔朱迪思·科斯滕鲍尔格哈德·莱希特弗雷德约尔格·温克勒黄茂成马丁·卡特赖因伊丽莎白·艾登伯格
Owner PLANSEE SE