Supercharge Your Innovation With Domain-Expert AI Agents!

Preparation method of high-purity tungsten hexafluoride

A tungsten hexafluoride, high-purity technology, used in tungsten halide and other directions, can solve problems such as uneconomical, low product purity, and complicated post-processing, and achieve the effect of reducing processing costs, ensuring safety, and having high industrial application value.

Active Publication Date: 2018-09-25
南大光电(淄博)有限公司
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a preparation method of high-purity tungsten hexafluoride, which solves the problems of low product purity, uneconomical, and cumbersome post-processing existing in the existing process, and has the advantages of safety, economy, high product purity, energy saving, environmental protection, and impurity few features

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of high-purity tungsten hexafluoride
  • Preparation method of high-purity tungsten hexafluoride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] NF with a purity of 99.999% 3 into the cracker, in tungsten nitride and copper fluoride (W 2 N:CuF 2 =1:1) under the catalytic action of cracking, the cracking temperature is controlled at 300°C, the cracked gas enters the reactor at a flow rate of 2-3L / min, and reacts with the tungsten powder in the reactor at 500°C, and the reaction pressure is 0.2Mpa, the gas generated by the reaction is collected after condensation, and the crude product of tungsten hexafluoride is obtained. After distillation (10-30°C, 0-0.5Mpa) and rectification (15-30°C, 0-0.2Mpa), high-purity Tungsten hexafluoride gas.

[0020] The purity of the high-purity tungsten hexafluoride gas obtained in this implementation was tested, and the test results are shown in Table 1.

Embodiment 2

[0022] NF with a purity of 99.995% 3 into the cracker, in tungsten nitride and nickel fluoride (W 2 N:NiF 2 =1:8) under the catalytic action of cracking, the cracking temperature is controlled at 280°C, the cracked gas enters the reactor at a flow rate of 2-3L / min, and reacts with the tungsten powder in the reactor at 500°C, and the reaction pressure is 0.2Mpa, the gas generated by the reaction is collected after condensation, and the crude product of tungsten hexafluoride is obtained. After distillation (10-30°C, 0-0.5Mpa) and rectification (15-30°C, 0-0.2Mpa), high-purity Tungsten hexafluoride gas.

[0023] The purity of the high-purity tungsten hexafluoride gas obtained in this implementation was tested, and the test results are shown in Table 1.

Embodiment 3

[0025] NF with a purity of 99.96% 3 into the cracker, in tungsten nitride and ferric fluoride (W 2 N:FeF 3 =1:10) under the catalytic action of cracking, the cracking temperature is controlled at 250°C, the cracked gas enters the reactor at a flow rate of 2-3L / min, and reacts with the tungsten powder in the reactor at 500°C, and the reaction pressure is 0.2Mpa, the gas generated by the reaction is collected after condensation, and the crude product of tungsten hexafluoride is obtained. After distillation (10-30°C, 0-0.5Mpa) and rectification (15-30°C, 0-0.2Mpa), high-purity Tungsten hexafluoride gas.

[0026] The purity of the high-purity tungsten hexafluoride gas obtained in this implementation was tested, and the test results are shown in Table 1.

[0027] Table 1 Test results

[0028]

[0029] It can be seen from Table 1 that the product obtained by the preparation method of the present invention has high purity, and the subsequent treatment process is not complicate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of high-purity tungsten hexafluoride, and belongs to the technical field of fluorine chemical industry. The preparation method comprises the following steps: introducing nitrogen trifluoride gas into a cracker containing a catalyst to perform cracking; then enabling a fluorine-nitrogen mixture obtained by cracking to react with tungsten powder; performing condensation to obtain a tungsten hexafluoride crude product; and performing distillation and rectification to obtain tungsten hexafluoride of which the purity reaches 99.999%. The preparation method provided by the invention is safe and economical, the introduction of the catalyst ensures that nitrogen is not needed to be additionally introduced into a feed gas to ensure the safety of reaction, the purity of the obtained product reaches a 6N level, and the subsequent treatment cost is reduced, so that the preparation method is economical and environment-friendly and has great industrial application values.

Description

technical field [0001] The invention relates to a preparation method of high-purity tungsten hexafluoride, which belongs to the technical field of fluorine chemical industry. Background technique [0002] Among the tungsten fluorides, tungsten hexafluoride is the only species that exists stably and has been industrially produced. Its main use is as a raw material for metal tungsten chemical vapor deposition (CVD) process in the electronics industry, especially the products made of it. wxya 2 It can be used as a wiring material in a large scale integrated circuit (LSI), and a composite coating of tungsten and rhenium can also be prepared by a mixed metal CVD process for the manufacture of X-ray emitting electrodes and solar absorbers. In addition, high-purity tungsten hexafluoride is mainly used as a raw material for semiconductor electrodes and conductive pastes in the electronics industry. The purity of tungsten hexafluoride in LSI must be above 99.999%. The traditional p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G41/04
CPCC01G41/04C01P2006/80
Inventor 宋学章周杰潘波李文田玲玲
Owner 南大光电(淄博)有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com