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N-type polycrystalline silicon for solar cell, and production method of N-type polycrystalline silicon

A technology for solar cells and production methods, applied in polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as high resistivity defect rate, high cost, and large distribution range of solar cells, and achieve resistance difference The effect of small and small resistivity difference

Inactive Publication Date: 2017-04-26
TAIZHOU BEYOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The conversion efficiency of solar cells made of N-type monocrystalline silicon is higher than that of P-type. N-type silicon crystals for solar cells are divided into N-type monocrystalline silicon and N-type polycrystalline silicon. Among them, N-type monocrystalline silicon The conversion efficiency is higher than that of N-type polysilicon, but the production efficiency is low and the cost is high. Although the N-type polysilicon produced by the traditional doping method is cheap, the doped elements will segregate due to different segregation coefficients and the distribution is uneven. , so the resistivity defect rate is high, the utilization rate of the material is low, and the conversion efficiency of the solar cells produced has a large distribution range

Method used

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  • N-type polycrystalline silicon for solar cell, and production method of N-type polycrystalline silicon

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Embodiment 1

[0044] Such as figure 1 , figure 2 , image 3 Shown, a kind of production method of N-type polysilicon for solar cell is characterized in that, comprises the steps:

[0045] A. Material preparation: prepare raw materials suitable for casting, wherein the raw materials can be silicon;

[0046] B. Casting: The raw materials are placed in the crucible, the system is vacuum leak tested, and polysilicon ingots with high resistance are produced through the casting method. During the casting process, the temperature and temperature change rate in the crucible need to be precisely controlled to produce Produce polysilicon ingots that are more suitable for neutron irradiation;

[0047] C. Irradiation: Place the polysilicon ingot in an atomic furnace with a cadmium ratio of more than 10 for irradiation, and irradiate from the side of the polysilicon ingot. The irradiation time in this embodiment is 150 hours;

[0048] D. Cutting: the N-type polysilicon silicon ingot 2 is cut and gr...

Embodiment 2

[0066] The production method of the N-type polysilicon for solar cells is basically the same as that of the first embodiment, except that polysilicon with high resistance and without adding impurities that determine the conductivity type is used as the raw material for casting.

Embodiment 3

[0068] The production method of the N-type polysilicon for solar cells is basically the same as that of the first embodiment, except that defective products produced during the production of monocrystalline silicon are used as raw materials for casting.

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Abstract

The invention provides N-type polycrystalline silicon for a solar cell, and a production method of the N-type polycrystalline silicon, belongs to the technical field of semiconductors, and solves the problem of large resistivity difference value of existing N-type polycrystalline silicon for the solar cell. The detection resistivity between two points with a distance of L on the surface of an N-type polycrystalline silicon ingot or an N-type polycrystalline silicon wafer for the solar cell is a detection value R, and a difference value of detection values R of any two positions on the surface of the N-type polycrystalline silicon ingot or the N-type polycrystalline silicon wafer is less than or equal to 3%; and the production method of the N-type polycrystalline silicon for the solar cell comprises the steps of material preparation, casting, irradiation, cutting and the like. A paper cup has relatively high strength and a relatively good anti-scald effect; the resistivity difference value of the N-type polycrystalline silicon wafer or the N-type polycrystalline silicon ingot for the solar cell is small; and processed solar cell pieces can be intensively distributed in a range of high photoelectric conversion efficiency and have higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to N-type polycrystalline silicon for solar cells and a production method thereof. Background technique [0002] The conversion efficiency of solar cells made of N-type monocrystalline silicon is higher than that of P-type. N-type silicon crystals for solar cells are divided into N-type monocrystalline silicon and N-type polycrystalline silicon. Among them, N-type monocrystalline silicon The conversion efficiency is higher than that of N-type polysilicon, but the production efficiency is low and the cost is high. Although the N-type polysilicon produced by the traditional doping method is cheap, the doped elements will segregate due to different segregation coefficients and the distribution is uneven. , so the defective rate of resistivity is high, the utilization rate of materials is low, and the distribution range of the conversion efficiency of the prepared solar cells is re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06C30B33/04
Inventor 星野政宏张乐年
Owner TAIZHOU BEYOND TECH