A preparation method of gallium nitride-based semiconductors for LEDs
A gallium nitride-based semiconductor technology, applied in the field of gallium nitride-based semiconductor preparation, can solve problems such as poor anti-static breakdown capability, reduced diode performance, and reduced internal quantum efficiency, so as to reduce internal leakage and improve reverse performance. Voltage, effect of reducing operating speed
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Embodiment 1
[0034] H 2 High temperature purification of the substrate in the environment; at 1000 ℃ H 2 In the atmosphere, pass 100L / min of H 2 , Keep the reaction chamber pressure at 100mbar, and process the substrate for 8 minutes.
[0035] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.
[0036] Using metal organic compound chemical vapor deposition method, at 550 ℃, keep the reaction chamber pressure 300mbar, flow 10000sccm NH 3 , 50sccm of TMGa, 100L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 20nm on the substrate.
[0037] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN layer with a growth temperature of 1050°C, a thic...
Embodiment 2
[0047] H 2 High temperature purification of the substrate in the environment; H at 1050℃ 2 In the atmosphere, pass 120L / min of H 2 , Maintain the pressure of the reaction chamber at 200 mbar, and process the substrate for 9 minutes.
[0048] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.
[0049] Using metal organic compound chemical vapor deposition method, at 570℃, keep the pressure of the reaction chamber 450mbar, and pass NH with a flow rate of 15000sccm 3 , 75sccm of TMGa, 120L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 20nm-40nm on the substrate.
[0050] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN lay...
Embodiment 3
[0060] H 2 High temperature purification of the substrate in the environment; H at 1100℃ 2 In the atmosphere, pass 130L / min of H 2 , Maintain the reaction chamber pressure at 300mbar, and process the substrate for 10 minutes.
[0061] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.
[0062] Using metal organic compound chemical vapor deposition method, at 580℃, keep the reaction chamber pressure 600mbar, and pass NH with a flow rate of 20000sccm 3 , 100sccm of TMGa, 130L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 40nm on the substrate.
[0063] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN layer with a growth t...
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