Etching liquid composition for copper-based metal film, array substrate using the etching liquid composition for display device and manfuacutring method of the etching liquid composition

A technology for array substrates and display devices, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as increased process time, reduced etching straightness, and poor etching contours, and achieves excellent etching contours, The effect of a small amount of change

Inactive Publication Date: 2017-05-03
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to etch a multilayer film of such a copper-based metal film, it is necessary to use two different etching solutions for etching each metal film.
[0005] In addition, the etching rate of the conventional etching solution is less than / sec is slower, and the process time (processtime) increases, so it is applied to a thickness of about Defective etch profile occurs when thick metal film is above
[0006] In addition, conventionally, there was a problem that the inclination angle of the etching pattern changed as the number of films treated with the etchant accumulated, and the etching straightness decreased, and the etch profile was poor. Therefore, there was also a problem that the use period of the etchant could not be extended.

Method used

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  • Etching liquid composition for copper-based metal film, array substrate using the etching liquid composition for display device and manfuacutring method of the etching liquid composition

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0117] Experimental example 1. Measurement of etching profile and etching straightness

[0118] In the experimental equipment (model name: ETCHER (TFT), SEMES company) of spraying type etching mode, put respectively the etchant composition of above-mentioned embodiment 1~5 and comparative example 1~5, set the temperature of etchant composition to Heating was performed at about 33°C. Although the total etching time may vary depending on the etching temperature, it is generally performed on the order of 50 to 80 seconds in the LCD etching process.

[0119] Put the substrate in, start spraying, take it out after 50 to 80 seconds of etching time, wash it with deionized water, and dry it with a hot air drying device. Cut the substrate after cleaning and drying. The cross section was measured with a scanning electron microscope (SEM: Hitachi product, model name S-4700). The results are described in Table 2 below.

[0120]

[0121] ○: good

[0122] △: Normal

[0123] Х: bad...

experiment example 2

[0125] Experimental example 2. The change of side erosion and the measurement of cone angle with the number of substrates processed

[0126] In the experimental equipment (model name: ETCHER (TFT), SEMES company) of spraying type etching mode, put respectively the etchant composition of above-mentioned embodiment 1~5 and comparative example 1~5, set the temperature of etchant composition to Heating was performed at about 33°C. Although the total etching time may vary depending on the etching temperature, it is generally performed on the order of 50 to 80 seconds in the LCD etching process.

[0127] Regarding the measurement of the side erosion change and the cone angle measurement with the number of sheets being processed, the Mo-Ti and Cu powder is thrown in and performed. In the case of 300ppm, put in 150ppm of Mo-Ti powder and 150ppm of Cu powder; in the case of 3,000ppm, put in 1,500ppm of Mo-Ti powder and 1,500ppm of Cu powder; ppm and Cu powder 3,500ppm, experiment....

experiment example 3

[0132] Experimental example 3. Residue measurement

[0133] In the experimental equipment (model name: ETCHER (TFT), SEMES company) of spraying type etching mode, put respectively the etchant composition of above-mentioned embodiment 1~5 and comparative example 1~5, set the temperature of etchant composition to Heating was performed at about 33°C. Although the total etching time may vary depending on the etching temperature, it is generally performed on the order of 50 to 80 seconds in the LCD etching process.

[0134] Put the substrate in, start spraying, take it out after 50 to 80 seconds of etching time, wash it with deionized water, dry it with a hot air drying device, and remove the photoresist with a photoresist stripper (PR stripper) . After washing and drying, use a scanning electron microscope (SEM; model name: S-4700, manufactured by HITACHI Corporation) to measure the residue, which is a phenomenon that the metal film remains without being etched, in the part no...

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Abstract

The invention relates to an etching liquid composition for a copper-based metal film, an array substrate using the etching liquid composition for a display device and a manfuacturing method of the etching liquid composition, particularly to an etching liquid composition for a copper-based metal film. The etching liquid composition for the copper-based metal film contains a ceertain content of the following substances: hydrogen peroxide, a fluorine compound, 5-methyl-1H-tetrazole, a compound having nitrogen atoms and carboxyl in a molecule, phosphate, sulfate, polyhydric alcohol surfactant and water, and the invention also relates to an array substrate for a display device which is manufactured by use of the composition, and a manufacturing method of the etching liquid composition.

Description

technical field [0001] The present invention relates to a method for manufacturing an array substrate for a display device, and more specifically, relates to an etchant composition for a copper-based metal film and a method for manufacturing an array substrate for a display device using the above-mentioned etchant composition. Background technique [0002] The process of forming metal wiring on a substrate in a semiconductor device generally includes steps utilizing the following processes: a metal film formation process by sputtering or the like; A photoresist forming process; and an etching process, and includes cleaning processes before and after individual unit processes, and the like. Such an etching step refers to a step of leaving a metal film in a selective region using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using an etchant composition is used. [0003] Conventionally, a metal film in which aluminum or an alloy t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L27/12C23F1/18
CPCH01L27/124H01L27/1259C23F1/18
Inventor 金童基金炼卓梁圭亨
Owner DONGWOO FINE CHEM CO LTD
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