Buffer layer of secondary electron emission film and preparation method thereof

A technology for secondary electron emission and buffer layer, which is applied in electron multiplier details, coating, sputtering and other directions, and can solve the problems of reducing the grain size of magnesium oxide and reducing the secondary electron emission performance of composite films. , to achieve the effect of promoting growth and improving the performance of secondary electron emission

Active Publication Date: 2017-05-10
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, experimental studies have shown that during the preparation of MgO composite films doped with metal materials, the agglomeration phenomenon during deposition of metal materials will affect the crystallization of MgO and reduce the grain size of MgO, thereby reducing the binary density of composite films. Sub-electron emission performance

Method used

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  • Buffer layer of secondary electron emission film and preparation method thereof
  • Buffer layer of secondary electron emission film and preparation method thereof
  • Buffer layer of secondary electron emission film and preparation method thereof

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Embodiment 1

[0025] refer to figure 1 , indicating a secondary electron emission source structure of a magnesium oxide composite thin film doped with metal materials. The secondary electron emission source is composed of a metal base 1 , a nickel oxide buffer layer 2 fabricated on the metal base 1 , and a magnesium oxide layer 3 doped with metal materials fabricated on the nickel oxide buffer layer 2 . The preparation of nickel oxide buffer layer 2 comprises the following steps:

[0026] The metal substrate 1 is cleaned. First, before depositing the nickel oxide buffer layer 2 on the metal substrate 1, the metal substrate 1 is cleaned, the metal substrate 1 is put into a container, acetone is poured into the container to soak the metal substrate 1, and the container is put into ultrasonic cleaning The metal base 1 was ultrasonically cleaned in the machine for 15 minutes, and then the acetone in the container was replaced with ethanol and pure water in turn, and the metal base 1 was ultra...

Embodiment 2

[0029] refer to figure 1 , indicating a secondary electron emission source structure of a magnesium oxide composite thin film doped with metal materials. The secondary electron emission source is composed of a metal base 1 , a nickel oxide buffer layer 2 fabricated on the metal base 1 , and a magnesium oxide layer 3 doped with metal materials fabricated on the nickel oxide buffer layer 2 . The preparation of nickel oxide buffer layer 2 comprises the following steps:

[0030] The metal substrate 1 is cleaned. First, before depositing the nickel oxide buffer layer 2 on the metal substrate 1, the metal substrate 1 is cleaned, the metal substrate 1 is put into a container, acetone is poured into the container to soak the metal substrate 1, and the container is put into ultrasonic cleaning The metal base 1 was ultrasonically cleaned in the machine for 15 minutes, and then the acetone in the container was replaced with ethanol and pure water in turn, and the metal base 1 was ultra...

Embodiment 3

[0033] refer to figure 1 , indicating a secondary electron emission source structure of a magnesium oxide composite thin film doped with metal materials. The secondary electron emission source is composed of a metal base 1 , a nickel oxide buffer layer 2 fabricated on the metal base 1 , and a magnesium oxide layer 3 doped with metal materials fabricated on the nickel oxide buffer layer 2 . The preparation of nickel oxide buffer layer 2 comprises the following steps:

[0034]The metal substrate 1 is cleaned. First, before depositing the nickel oxide buffer layer 2 on the metal substrate 1, the metal substrate 1 is cleaned, the metal substrate 1 is put into a container, acetone is poured into the container to soak the metal substrate 1, and the container is put into ultrasonic cleaning The metal base 1 was ultrasonically cleaned in the machine for 15 minutes, and then the acetone in the container was replaced with ethanol and pure water in turn, and the metal base 1 was ultras...

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Abstract

The invention discloses a buffer layer of a secondary electron emission film and a preparation method thereof. When a magnesium oxide composite film secondary electron emission source doped with metal materials is prepared, the nickel oxide buffer layer is deposited on a metal substrate in a nickel target sputtering or nickel oxide target sputtering mode, and then a magnesium oxide composite film doped with the metal materials is deposited on the nickel oxide buffer layer. When the nickel oxide buffer layer is deposited, the temperature of the metal substrate is set to be 200-400 DEG C, argon and oxygen are led into a film coating cavity at the same time or only argon is led into the film coating cavity, and the air pressure is 0.1-1 Pa. The thickness of the nickel oxide buffer layer is 5-90 nm, and the grain size of nickel oxide is 3-20 nm. Since the nickel oxide buffer layer is deposited on the metal substrate, the inhibiting effect of metal deposition on magnesium oxide grain growth can be reduced and magnesium oxide grain growth is promoted when the magnesium oxide composite film doped with the metal materials is deposited later, and the secondary electron emission performance of the composite film can be improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, and relates to a buffer layer of a secondary electron emission film that can be used in devices such as electron multipliers and photomultiplier tubes and a preparation method thereof. Background technique [0002] Magnesium oxide film is widely used as a secondary electron emission source in image intensifiers, electron multipliers, photomultiplier tubes, orthogonal In devices such as field amplifiers and plasma displays. When used in devices such as electron multipliers and photomultiplier tubes, in order to obtain a long service life for the devices, the secondary electron emission source must be able to withstand the long-term bombardment of the electron beam with a large beam current density, so the thickness of the prepared magnesium oxide film is It needs to reach tens of nanometers or even more than one hundred nanometers. However, since magnesium oxide is a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34H01J43/04
CPCH01J43/04C23C14/0036C23C14/081C23C14/085C23C14/34
Inventor 胡文波李洁吴胜利魏强华星郝玲
Owner XI AN JIAOTONG UNIV
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