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Two-junction laser battery epitaxial layer and preparation method thereof

An epitaxial layer and cell technology, applied in the field of solar cells, can solve the problem of blank research on multi-junction laser cells, and achieve the effects of good cell stability, easy growth, and improved conversion efficiency.

Inactive Publication Date: 2017-05-10
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology

However, at present, no company or research institute in China has developed related commercial products, and the research on multi-junction laser cells is still blank.

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  • Two-junction laser battery epitaxial layer and preparation method thereof

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Embodiment Construction

[0024] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings:

[0025] A two-junction laser solar cell, including a gallium arsenide substrate, from bottom to top, GaAs buffer layer, first tunnel junction, (AlGa) 1-x In x As graded buffer layer, GaAs battery, second tunnel junction, GaAs battery and cap layer. The production process is:

[0026] 1. Using metal organic chemical vapor deposition (MOCVD) to deposit a GaAs buffer layer on the gallium arsenide substrate;

[0027] GaAs buffer layer, the n-type dopant is Si, Se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 , The pressure of the reaction chamber is 50-200mbar, the growth temperature is 600-700℃, and the thickness range is 100-4000nm;

[0028] 2. Growing the first tunnel junction on the GaAs buffer layer, including sequentially growing an n-type doped n+-GaInP layer and a p-type doped p+-AlGaAs layer, wherein the dopant of the n+-GaInP layer is Si...

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Abstract

The invention relates to a two-junction laser battery epitaxial layer and a preparation method thereof; the two-junction laser battery epitaxial layer comprises a GaAs buffer layer, a first tunnel junction, a first GaAs cell, a second tunnel junction, a second GaAs cell and a cap layer arranged in order on a GaAs substrate from bottom to top; the preparation method comprises the following steps: using a metal organic chemical vapor deposition (CVD) technology to deposit the GaAs buffer layer on the GaAs substrate; growing the first tunnel junction, the first GaAs sub cell, the second tunnel junction, the second GaAs sub cell and the cap layer in order on the GaAs buffer layer; the two-junction laser battery epitaxial layer uses the two sub-cells connected in series to reduce the total current, thus reducing power loss caused by cascading resistors, and improving conversion efficiency; the battery preparation method uses the metal organic chemical vapor deposition (CVD) technology, thus precisely controlling the growth process, and forming the crystal with good quality.

Description

Technical field [0001] The invention belongs to the field of solar cells, and particularly relates to a two-junction laser cell epitaxial layer and a preparation method thereof. Background technique [0002] At present, laser batteries have great application prospects in the field of wireless energy transmission in space. They are suitable for wireless transmission in space (high-orbit spacecraft solar cell arrays realize the conversion of solar energy into electric energy, and the electric energy is converted into laser. Ground laser battery array power, laser power to nearby space drones, laser power to low-orbit space vehicles), used as energy receivers or signal receivers. However, at present, no company or research institute in China has developed relevant commercial products, and the research on multi-junction laser batteries is still blank. [0003] Group III-V compounds represented by GaAs have many advantages. For example, it has a direct band gap energy band structure, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0725H01L31/0352H01L31/18
CPCH01L31/035272H01L31/0725H01L31/184Y02E10/50Y02P70/50
Inventor 唐悦张启明高鹏王宇
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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