C-axis aligned crystalline IGZO thin film and preparation method thereof

Abstract

The invention provides a C-axis aligned crystalline IGZO thin film and a preparation method of the C-axis aligned crystalline IGZO thin film. According to the preparation method of the C-axis aligned crystalline IGZO thin film, the C-axis aligned crystalline IGZO thin film is prepared through an atomic layer deposition method, the structure of C-axis aligned crystalline IGZO can be precisely controlled at the atomic level, the crystalline mass of the prepared C-axis aligned crystalline IGZO is good, the number of the oxygen vacancies is small, and the TFT stability can be improved; due to the fact that the area of a crystalline region in the prepared C-axis aligned crystalline IGZO thin film is larger, the hundred-micron level to the millimeter level is reached, and thus the large-scale application of the C-axis aligned crystalline IGZO can be promoted; and meanwhile the C-axis aligned crystalline IGZO thin film is prepared by the adoption of the optimum process condition, the production yield can be increased, and the production cost is lowered. According to the C-axis aligned crystalline IGZO thin film, the crystalline quality of the C-axis aligned crystalline IGZO is good, the number of the oxygen vacancies is small, the TFT stability can be improved, meanwhile the area of the crystalline region is larger, and thus the mass application of the C-axis aligned crystalline IGZO is facilitated.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a C-axis crystalline IGZO thin film and a preparation method thereof. Background technique [0002] Thin Film Transistor (TFT) is the main driving element in current Liquid Crystal Display (LCD) and Active Matrix Organic Light-Emitting Diode (AMOLED). It is related to the development direction of high-performance flat panel display devices. [0003] With the rise of terminal applications such as smartphones and flat panel displays, the requirement for high-definition panels above 250PPI (Pixels Per Inch, the number of pixels per inch) has gradually become a matching trend, which has also prompted more panel manufacturers to invest in high-definition The production of Low Temperature Polysilicon (LTPS) thin film transistors is expanding. However, due to the high process complexity of the low temperature polysilicon TFT (LTPS TFT) production line, and the yield rate is also a big...

AI Technical Summary

Problems solved by technology

The research team of SEL (Semiconductor Energy Laboratory Co., Ltd) used magnetron sputtering to prepare C-axis crystalline IGZO thin films, but only the regions with a diameter of 1nm-3nm in the prepared C-axis crystalline IGZO thin films were in a crystalline state, which was absolutely impossible. Most of the regions are in the amorphous state, that is to say, in the C-axis crystalline IGZO thin film, only a very small region is C-axis crystalline IGZO, and the rest of the region is a-IGZO. Due to the small area of ​​the crystalline region, therefore It is not conducive to the large-scale application of C-axis crystalline IGZO

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