Electrochemical sensor based on nanowire microelectrode
A nanowire and microelectrode technology, which is applied in the field of analysis and detection, can solve the problems that affect the detection accuracy of electrochemical sensors and the metal nanowires are easy to tear, and achieve the effects of simple structure, increased density and surface area, and stable structure
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Embodiment 1
[0028] Such as figure 1 As shown, a kind of electrochemical sensor based on the nanowire microelectrode of the present embodiment, at first, on the surface of sapphire substrate 1, utilize chemical vapor deposition technique to grow one deck n-type GaN buffer layer 2; GaN single crystal nanowires (length 10 micrometers, diameter 100 nanometers) continue to grow on layer 2. Since the crystal orientation of GaN single crystal nanowires is consistent with that of the n-type GaN buffer layer 2, the growth direction of GaN single crystal nanowires remains consistent, forming a vertical and ordered nanowire array; finally, using magnetron sputtering coating technology, the The surface of the GaN single crystal nanowire is coated with a layer of platinum film (thickness is about 50 nanometers), and the preparation of the nanowire microelectrode of the electrochemical sensor is completed.
[0029] The GaN single crystal nanowires in this embodiment can maintain vertical and orderly g...
Embodiment 2
[0032] A kind of electrochemical sensor based on the nanowire microelectrode of the present embodiment, at first, on the surface of ZnO substrate, grow the ZnO single crystal nanowire array (length 100 micrometers, diameter 2 micrometers) of vertical order; Then, utilize magnetic Controlled sputtering coating technology, coating a layer of gold film (thickness 3 nanometers) on the surface of ZnO single crystal nanowires.
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