A water mark and particle elimination method applied to single chip cleaning process
A process and water mark technology, applied in the direction of electrical components, circuits, semiconductor/solid device manufacturing, etc., to achieve the effect of water mark and particle reduction
Active Publication Date: 2020-04-03
BEIJING SEVENSTAR ELECTRONICS CO LTD
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Problems solved by technology
In the traditional DHF process, since the rotation speed and flow rate of the silicon wafer will maintain a fixed value during the "DI water" process in step 2, it is impossible to form an effective liquid film on the surface of the silicon wafer, which will cause water The generation of traces and particles, so IPA+N cannot be used after the DHF process 2 dry process to eliminate water marks and particles
Method used
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Embodiment Construction
[0031] The invention provides a method for eliminating water marks and particles applied to a single-chip cleaning process, comprising the following steps:
[0032] Step S1: Cleaning the surface of the silicon wafer rotating at the first rotational speed with DHF at the first flow rate and the first time to remove the oxide film on the surface of the silicon wafer;
[0033] Step S2: Rinse the surface of the silicon wafer rotating at a second rotational speed with deionized water at a second flow rate and for a second time, so as to quickly remove the reaction product and DHF remaining on the surface of the silicon wafer;
[0034] Step S3: Continue to rinse the surface of the silicon wafer rotating at the third rotational speed with deionized water at a third flow rate and for a third time, so as to form a uniform liquid film of deionized water on the surface of the silicon wafer; wherein, the third rotational speed is lower than the first Second speed, the third flow rate is g...
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The invention discloses a water mark and particle elimination method applied to a single chip cleaning process. Through changing a traditional deionized water washing step into two sub steps with different flows and rotation speeds, firstly cleaning with large rotation speed and small flow is carried out to rapidly remove residual reaction products and the DHF residue at the surface of a silicon chip, then cleaning with small rotation speed and large flow is carried out to form a uniform and thick deionized water liquid film at the surface of the silicon chip, the contact with the surface of the silicon chip with air to generate water mark and particles is avoided, thus the small surface tension effect of an IPA and the showing effect of nitrogen can be used to rapidly dry the surface of the silicon chip, and the effective reduction of the water mark and particles at the surface of the silicon chip after the IPA process is realized.
Description
technical field [0001] The invention relates to the technical field of semiconductor cleaning, and more particularly relates to a method for eliminating water marks and particles by using IPA in a single chip cleaning process. Background technique [0002] In the semiconductor process, the DHF (diluted hydrofluoric acid) process has a wide range of applications. Among them, the DHF process can be mainly applied to the epitaxial process to remove the oxide layer on the surface of the silicon wafer. When DHF is used to remove the oxide layer on the surface of the wafer (silicon wafer), the exposed wafer surface becomes a hydrophobic interface, which is prone to water marks and particles. [0003] IPA (iso-Propyl alcohol, isopropanol) is a chemical solution with very low surface tension. The use of IPA can effectively reduce the generation of water marks and particles on the surface of the wafer. At present, the IPA process is mainly used in the tank cleaning machine, and the...
Claims
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IPC IPC(8): H01L21/02
CPCH01L21/02H01L21/02057
Inventor 陈洁刘效岩
Owner BEIJING SEVENSTAR ELECTRONICS CO LTD