Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of array substrate and preparation method thereof

An array substrate and via hole technology, applied in the field of array substrate and its preparation, can solve problems such as damage, metal layer damage, and metal lattice state destruction of metal materials

Active Publication Date: 2021-03-16
HEFEI BOE OPTOELECTRONICS TECH +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, dry etching is generally used when etching the first metal line contact hole and the second metal line contact hole, and the process gas is ionized during dry etching, and the generated plasma will have a strong impact on the metal material. The bombardment effect destroys the metal lattice state of the metal material, causing serious damage to the metal layer
[0004] like Figure 4 As shown, after continuing to complete the etching to form the first metal line contact hole, and stripping the photoresist, since the stripping liquid is an alkaline liquid, under the influence of the stripping liquid and the water vapor in the air, the second metal line 30 The first etch stop layer is easily damaged, resulting in extensive corrosion of the second metal line 30
Corrosion of the second metal wire 30 will affect the corrosion resistance of the entire array substrate in the subsequent manufacturing process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of array substrate and preparation method thereof
  • A kind of array substrate and preparation method thereof
  • A kind of array substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] Embodiments of the present invention provide a method for preparing an array substrate, such as Figure 5 As shown, the method includes:

[0035] S10, such as Image 6 As shown, a first metal wire 20, an insulating film layer 41, a second metal wire 30, a first etching barrier layer 60 and a passivation film layer 51 are sequentially formed on the substrate 10, and the first etching barrier layer 60 is formed on the substrate 10. The orthographic projection on the base 10 falls within the orthographic projection of the second metal line 30 on the substrate 10 .

[0036] S20, such as Figure 7 As shown, through the first etching, a first via hole 52 and a second via hole 53 are formed on the passivation film layer 51; the orthographic projection of the first via hole 52 on the substrate 10 falls into the first metal line 20 In the orthographic projection on the substrate 10 , the surface of the insulating film layer 41 is exposed; the orthographic projection of the se...

Embodiment 1

[0049] A method for preparing an array substrate is provided, such as Figure 10 As shown, the method includes:

[0050] S100 , forming a first metal wire 20 and an insulating film layer 41 on the substrate 10 in sequence.

[0051] Wherein, forming the first metal line 20 on the substrate 10 may be formed by, for example, a patterning process. The material of the insulating film layer 41 may be, for example, silicon nitride, silicon oxide, or the like.

[0052] S110 , sequentially forming a first conductive film and a second conductive film on the substrate 10 on which the insulating film layer 41 is formed, and forming a photoresist.

[0053] The material of the first etching barrier layer 60 is metal, and the first etching barrier layer 60 is formed after patterning the second conductive film.

[0054] S120 , exposing the photoresist by using a mask, and forming a photoresist completely retained part and a photoresist completely removed part after developing.

[0055] S1...

Embodiment 2

[0069] Provided is a preparation method of an array substrate. The steps before etching the passivation film layer 51 under the part where the photoresist is completely removed are the same as the steps S100-S150 in the first embodiment.

[0070]S161 , feeding sulfur hexafluoride into the plasma etching equipment, as shown in FIG. 11( c ), etching the passivation film layer 51 under the part where the photoresist is completely removed to form the first via hole 52 and The second via hole 53 .

[0071] After the passivation film layer 51 is etched through, as shown in FIG. 11( c ), the first etching barrier layer 60 above the second metal line 30 is exposed through the second via hole 53 , while the first etch barrier layer 60 above the first metal line 20 is exposed. The insulating film layer 41 is still shielded, but the first via hole 52 is etched above the insulating film layer 41. At this time, the supply of sulfur hexafluoride gas into the plasma etching equipment is stop...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an array substrate and a preparation method thereof, and relates to the technical field of displaying, aiming at improving the corrosion resistance of the array substrate. The preparation method comprises the following steps: forming a first metal wire, an insulation film layer, a second metal wire, a first etching barrier layer and a passivation film layer on a substrate, wherein the projection of the first etching barrier layer on the substrate falls into the projection of the second metal wire on the substrate; forming a first via hole and a second via hole in the passivation film layer through first-time etching, wherein the projection of the first via hole on the substrate falls into the projection of the first metal wire on the substrate, and the surface of the insulation film layer is exposed, the orthographic projection of the second via hole on the substrate falls into the orthographic projection of the first etching barrier layer on the substrate and the surface of the first etching barrier layer is exposed; forming a third via hole on the insulation film layer through second-time etching, wherein the orthographic projection of the third via hole on the substrate is overlapped with the orthographic projection of the first via hole on the substrate, and the first metal wire is exposed; removing the first etching barrier layer under the second via hole to expose the second metal wire.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] An existing display device includes an array substrate on which gate lines and data lines are arranged, and an IC (integrated circuit, integrated circuit) is connected to the gate lines and the data lines in the bonding area, and outputs control signals to the gate lines and the data lines. When the gate line and the data line are connected to the IC, in order to block the water and oxygen between the gate line and the data line, those skilled in the art use the gate line transparent conductive layer to connect with the gate line through the gate line contact hole, and the data line transparent conductive layer to pass through the data line. The contact hole is connected with the data line, and the IC is connected with the gate line and the data line by connecting the gate line transparent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/124H01L27/1259
Inventor 宫奎
Owner HEFEI BOE OPTOELECTRONICS TECH