Method of preparing Ge-based plasma pin diode used for reconfigurable multilayer holographic antenna

Abstract

The invention discloses a method of preparing a Ge-based plasma pin diode used for a reconfigurable multilayer holographic antenna. The Ge-based plasma pin diode is used for the production of the reconfigurable multilayer holographic antenna, and the method of preparing the Ge-based plasma pin diode comprises steps that a GeOI substrate in one crystal direction is selected, and an isolation area is disposed in the GeOI substrate; the GeOI substrate is etched to form a P type groove and an N type groove, and the depth of the P type groove and the depth of the N type groove are smaller than the thickness of the top layer Ge of the GeOI substrate; a first P type active area and a first N type active area are formed in the P type groove and the N type groove by adopting an ion implantation way; by filling the P type groove and the N type groove, a second P type active area and a second N type active area are formed in the top layer Ge of the GeOI substrate by adopting the ion implantation way; a lead is formed on the GeOI substrate to complete the preparation of the Ge-based plasma pin diode. The high performance Ge-based plasma pin diode suitable for forming the reconfigurable multilayer holographic antenna is prepared by adopting the deep groove isolation technology and the ion implantation technology.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, relates to the technical field of antennas, in particular to a method for preparing a Ge-based plasma pin diode used for a reconfigurable multilayer holographic antenna. Background technique [0002] Due to its relatively large weight and volume, the traditional metal antenna is inflexible in design and manufacture, and its self-reconfiguration and adaptability are poor, which seriously restricts the development and performance improvement of radar and communication systems. Therefore, in recent years, the theory of antenna broadband, miniaturization, and reconfiguration and multiplexing has become increasingly active. [0003] Against this background, the researchers proposed a new antenna concept-plasma antenna, which is a radio-frequency antenna that uses plasma as a guiding medium for electromagnetic radiation. The plasma antenna can change the instantaneous bandwi...

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Problems solved by technology

[0004] At present, the materials used in pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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