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Grating coupler and preparation method thereof

A technology of grating coupler and grating layer, applied in the coupling of optical waveguide, light guide, optics, etc., can solve the problem of low coupling efficiency of grating coupler, and achieve the effect of improving coupling efficiency and simple and convenient preparation process

Active Publication Date: 2017-06-20
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a kind of grating coupler and its preparation method in order to overcome the defect of low coupling efficiency of the grating coupler described in the prior art

Method used

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  • Grating coupler and preparation method thereof
  • Grating coupler and preparation method thereof
  • Grating coupler and preparation method thereof

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Embodiment 1

[0034] figure 1 It is a schematic structural diagram of a grating coupler according to an embodiment. Such as figure 1 Described, a kind of grating coupler, comprises: from bottom to top successively with the wafer with insulating layer 5 and grating layer 4, oxide layer 3 and optical waveguide layer 2; Refractive index; the grating layer 4 and the optical waveguide layer 2 are grating structures with a preset period; the grating layer 4 on the insulating layer 5 is used as a distributed Bragg grating reflector, and the optical waveguide layer 2 converts the The optical signal is vertically coupled into the grating coupler; during the process of optical coupling into the grating coupler, part of the light is directly coupled into the optical waveguide layer 2, and the other part of the light passes through the oxide layer 3 and irradiates the distributed Bragg grating reflector, and is absorbed by the Bragg grating The reflection mirror reflects back to the optical waveguide...

Embodiment 2

[0038] On the basis of Embodiment 1, this embodiment further defines its various components, specifically:

[0039] The grating layer on the insulating layer is a silicon grating layer, and the optical waveguide layer is a silicon nitride optical waveguide layer; the silicon wafer on the insulating layer is used as a distributed Bragg grating reflector, and the silicon nitride optical waveguide layer The optical signal in the optical fiber is vertically coupled into the grating coupler; during the process of optical coupling into the grating coupler, part of the light is directly coupled into the silicon nitride optical waveguide layer, and the other part of the light passes through the oxide layer and irradiates the distributed Bragg grating reflector , and is reflected back to the silicon nitride optical waveguide layer by the Bragg grating mirror. In this embodiment, since the single crystal silicon material has a relatively high refractive index (n=3.42) in the communicati...

Embodiment 3

[0041] On the basis of Embodiment 1, this embodiment further defines its various components, specifically:

[0042] The grating layer on the insulating layer is a gallium arsenide wafer or an indium phosphide wafer, and the optical waveguide layer is a preset ratio of silicon oxynitride and silicon oxide optical waveguide layers; the gallium arsenide or silicon oxide optical waveguide layer on the insulating layer is The indium phosphide wafer is used as a distributed Bragg grating reflector, and the silicon oxynitride and silicon oxide optical waveguide layers with the preset ratio vertically couple the optical signal in the optical fiber into the grating coupler; during the process of light coupling into the grating coupler , a part of the light is directly coupled into the silicon oxynitride and silicon oxide optical waveguide layer with a preset ratio, and the other part of the light is irradiated through the oxide layer to the distributed Bragg grating reflector, and is re...

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Abstract

The present invention relates to a grating coupler. The grating coupler comprises a wafer, an oxide layer and a waveguide layer which are distributed sequentially from bottom to top, wherein the wafer is provided with an insulating layer and a grating layer; the refractive index of the grating layer is larger than that of the material of the optical waveguide layer; the grating layer and the optical waveguide layer are both of a preset periodical grating structure; the grating layer on the insulating layer is adopted as a distributed Bragg grating reflector; and in a process in which light is coupled into the grating coupler, a part of the light is directly coupled into the optical waveguide layer, and the other part of the light passes through the oxide layer, irradiates the distributed Bragg grating reflector and is reflected back to the optical waveguide layer by the Bragg grating reflector. The high-refractive index chip on the insulating layer is adopted as the distributed Bragg grating reflector, since the chip has high reflectivity, the ability of the grating coupler to radiate optical signals upwards can be greatly improved as much as possible, and the coupling efficiency of the grating coupler can be enhanced.

Description

technical field [0001] The invention relates to the field of passive photonic devices and its preparation, more specifically, to a grating coupler and its preparation method. Background technique [0002] In the early photonic integrated chip, the optical signal was coupled into the waveguide through the end face of the optical waveguide after the chip was cleaved to realize optical signal access. With the application of the grating coupler, unlike the end-face coupling of the cleaved chip, the optical signal can be vertically coupled without slicing and cleavage. [0003] The grating coupler is one of the basic photonic devices in the field of photonic integration. Through the diffraction of the optical signal by the grating structure etched on the surface, the coupling of the incident light perpendicular to the surface of the chip to the chip optical waveguide is realized. Due to its vertical coupling characteristics, through the grating structure etched on the surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/124G02B6/34
CPCG02B6/124G02B6/34
Inventor 张彦峰许鹏飞陈钰杰余思远
Owner SUN YAT SEN UNIV
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