Supercharge Your Innovation With Domain-Expert AI Agents!

MOSFET integrated with Schottky diode

A region and groove technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of high reverse bias leakage current, large chip area, poor device performance, etc., to increase the area and reduce the forward conduction Effect of Voltage, Small Chip Area

Inactive Publication Date: 2017-06-23
DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, Schottky diodes usually have a high reverse bias leakage current, which adversely affects the performance of the device. At the same time, the integration of Schottky diodes in MOSFET devices in the prior art usually requires a larger chip area.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOSFET integrated with Schottky diode
  • MOSFET integrated with Schottky diode
  • MOSFET integrated with Schottky diode

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0024] Such as figure 1 As shown, this embodiment integrates Schottky MOSFETs, including: a MOSFET region 100 and a Schottky region 200 between two MOSFET regions 100, and the MOSFET region 100 includes drain electrodes 10 stacked sequentially from bottom to top, The N-type heavily doped region 20, the N-type drift region 30, the P-type doped region 40, the N-type doped region 50, the source electrode 60, and the N-type doped region 50 and the P-type doped region 60 extending to the N-type The first trench 70 in the drift region 30, the first trench 70 is filled with conductive polysilicon 71, and the sidewall and bottom of the first trench 70 form a gate insulating layer 72, the conductive polysilicon 71 and the source electrode 60 are separated by an insulating medium 73, a Schottky region 200 is formed between two adjacent MOSFET regions 100, and the upper surface of the N-type drift region 30 of the Schottky region 200 is connected to the N-type drift region 30 of the MOSF...

no. 2 example

[0029] Such as figure 2 As shown, the technical solution of this embodiment is basically the same as that of the first embodiment. The impurity method can be doped by ion implantation. When the Schottky diode is in the reverse bias state, the P-type protection region 90 and the N-type drift region 30 form a PN depletion, which reduces the reverse leakage current and increases the reverse withstand voltage capability. .

no. 3 example

[0031] Such as image 3As shown, the technical solution of this embodiment is basically the same as that of the first embodiment, the difference is that the second groove 80 in this embodiment is an oblique groove, and the setting of the oblique groove can alleviate the Schottky diode in the MOSFET from being in the reverse direction. In the bias state, the electric field at the bottom and top corners of the trench gathers to increase the directional withstand voltage capability and reduce the reverse leakage current.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of power semiconductors and particularly to a MOSFET integrated with a Schottky diode. The MOSFET comprises MOSFET regions and a Schottky region between two MOSFET regions. Two discontinuous second trenches are formed in the upper surface of the N-type drift region of the Schottky region. Anode metal is deposited in, on, and between the two trenches, and is electrically connected to the sources of the MOSFET regions. Each second trench is in contact with the P-type doped region of an adjacent MOSFET region and has a depth not greater than that of the P-type doped region of the adjacent MOSFET region. The reverse leakage current of the integrated Schottky diode and the area thereof are decreased.

Description

technical field [0001] The invention relates to the field of power semiconductors, in particular to a Schottky-integrated MOSFET. [0002] technical background [0003] A power metal-oxide-semiconductor field-effect transistor (referred to as a power MOSFET) inherently has a parasitic diode connected in parallel with it. The anode of the parasitic diode is connected to the body and source of the MOSFET, and the cathode is connected to the drain of the MOSFET. Therefore, the power MOSFET is often used freewheeling or clamping voltage. [0004] This kind of parasitic diode is the same as the ordinary diode, and the minority carrier participates in the conduction, so it has a reverse recovery time, thereby reducing the switching speed and increasing the switching loss. Schottky diodes have advantages such as low forward diode voltage drop, and are usually connected in parallel with MOSFET devices to improve the diode recovery time of the switching action of the device, which ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/07H01L29/06H01L29/78H01L29/872
CPCH01L27/0727H01L29/0638H01L29/7827H01L29/872
Inventor 李风浪
Owner DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com