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A kind of ceramic metallized film and preparation method thereof

A technology of ceramic metallization and ceramic metal, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of large thickness of metallization layer, high cost, high sintering temperature, and reduce the loss of thermal expansion coefficient. The effect of matching, tensile strength improvement, and precise control of ceramic size

Active Publication Date: 2020-04-28
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has high sintering temperature, high cost, and large metallization layer thickness (20-60 μm), which is not conducive to the precise control of the size of ceramic parts.

Method used

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  • A kind of ceramic metallized film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1)Al 2 o 3 The substrate was cleaned with acetone and alcohol, and Ti / Al was prepared by magnetron co-sputtering 2 o 3 transition layer. Using metal Ti target and ceramic Al 2 o 3 target, vacuum cavity back vacuum is better than 2.0×10 -3 pa, Ti target power is 60W, Al 2 o 3 The target power is 100W, the working pressure is 1.5Pa, and the deposition time is 90 minutes. The transition layer has a thickness of 150 nm and a Ti content of 45 at%.

[0020] 2) on Ti / Al 2 o 3 The Ti layer is prepared by magnetron sputtering on the transition layer, using a metal Ti target, and the vacuum at the back of the vacuum chamber is better than 2.0×10 -3 pa, the Ti target power is 100W, the working pressure is 1.5Pa, and the deposition time is 30 minutes. The thickness of the Ti film is 100 nm.

[0021] 3) The Ni layer is prepared on the Ti layer by magnetron sputtering method, using a metal Ni target, and the vacuum at the back of the vacuum chamber is better than 2.0×10 ...

Embodiment 2

[0025] 1)Al 2 o 3 The substrate was cleaned with acetone and alcohol, and Ti / Al was prepared by magnetron co-sputtering 2 o 3 transition layer. Using metal Ti target and ceramic Al 2 o 3 target, vacuum cavity back vacuum is better than 2.0×10 -3 Pa, Ti target power is 80W, Al 2 o 3 The target power is 100W, the working pressure is 1.5Pa, and the deposition time is 80 minutes. The transition layer has a thickness of 130 nm and a Ti content of 75 at%.

[0026] 2) on Ti / Al 2 o 3 The Ti layer is prepared by magnetron sputtering on the transition layer, using a metal Ti target, and the vacuum at the back of the vacuum chamber is better than 2.0×10 -3 pa, the Ti target power is 100W, the working pressure is 1.5Pa, and the deposition time is 30 minutes. The thickness of the Ti film is 100 nm.

[0027] 3) The Ni / Mo layer was prepared on the Ti layer by magnetron sputtering, and the Ni / Mo alloy target was used, and the vacuum at the back of the vacuum chamber was better th...

Embodiment 3

[0031] 1) The SiC substrate was cleaned with acetone and alcohol, and the Nb / SiC transition layer was prepared by magnetron co-sputtering. Metal Nb target and ceramic SiC target are used, and the vacuum at the back of the vacuum chamber is better than 2.0×10 -3 pa, the Nb target power is 50W, the SiC target power is 100W, the working pressure is 1.5Pa, and the deposition time is 70 minutes. The transition layer has a thickness of 120 nm and a Nb content of 25 at%.

[0032] 2) On the Nb / SiC transition layer, the Nb layer is prepared by magnetron sputtering, using a metal Nb target, and the vacuum at the back of the vacuum chamber is better than 2.0×10 -3 pa, the Nb target power is 100W, the working pressure is 1.5Pa, and the deposition time is 24 minutes. The thickness of the Nb thin film is 80nm.

[0033] 3) On the Nb layer, the Ni / Mo layer was prepared by magnetron sputtering, and the Ni / Mo alloy target was used, and the vacuum at the back of the vacuum chamber was better ...

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Abstract

The invention discloses a cermet film and a preparation method thereof. The cermet film is composed of a ceramet composite transition layer, a first metal film and a second metal film which are sequentially applied on a ceramic matrix, wherein the ceramic metal composite transition layer is formed by compounding a first metal and the same composition as the ceramic matrix, and the first metal accounts for 20-80 at% of the ceramet composite transition layer; the ceramic matrix is composed of one of Al2O3, ZrO2, AlN, BN, SiC and Si3N4; the first metal is one of Nb, Ti, Cr, Zr, V and Ta; and the second metal is one or mixture of more of Ni, Mo, Au, Cu, Pt and W. The preparation method comprises the following steps: (1) depositing the ceramet composite transition layer on the ceramic matrix by sputter coating; and (2) sequentially depositing the first metal film and second metal film on the ceramet composite transition layer by sputter coating. The cermet film has the advantages of accurate ceramic size control and high tensile strength.

Description

technical field [0001] The invention relates to a ceramic metallization film and a preparation method thereof, belonging to the technical field of ceramic metallization applications. Background technique [0002] Ceramics have excellent properties such as high temperature resistance, corrosion resistance, wear resistance, radiation resistance, high frequency and high voltage insulation resistance, and are widely used in modern industries such as electronics, nuclear energy, and information. The connection of ceramics and ceramics, ceramics and metals can more effectively and fully exert the special properties of materials. Ceramic connection technology occupies an extremely important position in ceramic applications. [0003] The brazing connection process of ceramics requires metallization on the ceramic surface to improve the wetting performance of the ceramic surface to the solder. Traditional ceramic metallization mostly adopts sintered metal powder method, using refrac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/90C23C14/18C23C14/34
CPCC04B41/52C04B41/90C04B2201/50C23C14/0688C23C14/185C23C14/3464C04B41/4529C04B41/5098C04B41/5133C04B41/5116C04B41/5122C04B41/5127C04B41/5144
Inventor 李帅吕琴丽何迪张超张华刘晓鹏
Owner GRIMAT ENG INST CO LTD
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