Method for preparing large-size sapphire single crystals by means of bubble generation

A sapphire, large-scale technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as crystal cracking and quality not meeting the requirements, achieve low production cost, high material utilization rate, and facilitate air bubbles The effect of discharge

Inactive Publication Date: 2017-06-27
青海顺心精工科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This invention, like the existing Kyropoulo method, can only produce 85kg grade, φ290×350mm products. If you want to obtain 120kg grade, φ350×380mm products, crystal cracking will occur in this invention and the existing Kyropoulo method, and there will be Defects such as small-angle grain boundary stress, the quality cannot meet the requirements

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Follow the steps below to prepare sapphire single crystals:

[0048] (1) Loading:

[0049] Put 131.5 kg of alumina with a purity of 99.999% into a crucible with a diameter of 410 mm in a single crystal furnace with a furnace chamber diameter of 1200 mm, place a seed crystal with a diameter of 20 mm, crystal orientation A, and an orientation accuracy of ±0.1° Installed on the lifting mechanism in the single crystal furnace, the distance between the lower end surface of the seed crystal and the top surface of the crucible after installation is 50mm;

[0050] (2) Vacuuming:

[0051] Start the vacuum system to evacuate the single crystal furnace, when the vacuum degree in the single crystal furnace reaches 6.7×10 -7 Proceed to the next step when pa;

[0052] (3) Heating material:

[0053] Heating the crucible with a heater by increasing the voltage, heating at a boosting speed of 300mv / h until the power of the heater reaches 75KW, and then keeping the temperature consta...

Embodiment 2

[0073] Follow the steps below to prepare sapphire single crystals:

[0074] (1) Loading:

[0075] Put 120kg of alumina with a purity of 99.999% into a crucible with a diameter of 410mm in a single crystal furnace with a diameter of 1200mm, and install a seed crystal with a diameter of 18mm, a crystal orientation of A, and an orientation accuracy of ±0.1° On the pulling mechanism in the single crystal furnace, the distance between the lower end surface of the seed crystal and the top surface of the crucible after installation is 52mm;

[0076] (2) Vacuuming:

[0077] Start the vacuum system to evacuate the single crystal furnace, when the vacuum degree in the single crystal furnace reaches 6.7×10 -7 Proceed to the next step when pa;

[0078] (3) Heating material:

[0079] Heating the crucible with a heater by increasing the voltage, heating at a boosting speed of 200mv / h until the power of the heater reaches 75KW, and then keeping the temperature constant for 3 hours when t...

Embodiment 3

[0099] Follow the steps below to prepare sapphire single crystals:

[0100] (1) Loading:

[0101] Put 135kg of alumina with a purity of 99.999% into a crucible with a diameter of 410mm in a single crystal furnace with a furnace chamber diameter of 1200mm, and install a seed crystal with a diameter of 30mm, a crystal orientation of A, and an orientation accuracy of ±0.1° On the pulling mechanism in the single crystal furnace, the distance between the lower end surface of the seed crystal and the top surface of the crucible after installation is 55mm;

[0102] (2) Vacuuming:

[0103] Start the vacuum system to evacuate the single crystal furnace, when the vacuum degree in the single crystal furnace reaches 6.7×10 -7 Proceed to the next step when pa;

[0104] (3) Heating material:

[0105] Heat the crucible with a heater by increasing the voltage, and heat it at a boosting speed of 400mv / h until the power of the heater reaches 75KW, and start to keep the temperature constant....

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Abstract

The invention provides a method for preparing large-size sapphire single crystals by means of bubble generation. The method includes loading, vacuum, heating dissolving, seeding, shouldering, stripping, equal-diameter growing, pulling, annealing, blowing-out, argon filling cooling and blowing-in steps and the like. The method has the advantages that original technological procedures for growing 85 kg crystals are improved to obtain the method, the single crystallinity of the crystals is guaranteed by the aid of the stripping step, cracking of the crystals can be effectively prevented, defects such as small-angle crystal boundary stress and the like can be effectively overcome, the high-quality 120 kg-grade sapphire single crystals with the sizes of phi 350*380 mm can be prepared by the aid of the method, and requirements on sapphire growth in the current military and civil fields in China further can be met.

Description

technical field [0001] The invention relates to a method for preparing a sapphire single crystal, in particular to a method for preparing a large-sized sapphire single crystal. Background technique [0002] Sapphire, commonly known as corundum, is a simple coordination oxide, often blue due to the trace elements titanium (Ti4+) or iron (Fe2+). With the rapid development of science and technology, sapphire crystal has become an extremely important basic material for modern industry, especially microelectronics and optoelectronics industry. As the hardest oxide crystal, sapphire is used in a variety of demanding applications due to its optical and physical properties. The most important commercial applications at present are substrates for lighting and radio-frequency integrated circuits on sapphire silicon. Titanium-containing sapphire is an important laser material. In addition to being widely used in military infrared devices, missiles, submarines, satellite space technol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B17/00
CPCC30B17/00C30B29/20
Inventor 吕进金培鹏姜汉坤何康玉张树坡唐静李伟王金辉朱云鹏唐彬彬
Owner 青海顺心精工科技有限公司
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