Preparation method of memristor

A technology of memristive device and separation method, which is applied in the field of memory manufacturing, can solve problems such as the negative impact of semiconductor materials, and achieve the effects of low manufacturing cost, long cycle life and high switching performance

Inactive Publication Date: 2017-07-14
SOUTHWEST JIAOTONG UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a memristor, which can effectively solve the problem that semiconductor materials have negative effects on the environment and the human body

Method used

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  • Preparation method of memristor
  • Preparation method of memristor
  • Preparation method of memristor

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with the accompanying drawings, wherein:

[0024] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0025] figure 1 It is a flow chart of extracting ultrafine leaf powder by separation method, and a flow chart of preparing a silver / leaf / FTO memristive device on a conductive substrate. Such as figure 1 As shown, the preparation method of the silver / leaf / FTO memristive device of the present embodiment comprises the following steps:

[0026] Step 1, collecting enough dry leaves;

[0027] Step 2. Wash the leaves collected in step 1 with alcohol and deionized water several times in turn, then cut them into pieces with scissors, put them in a beaker, and then place them in a drying oven at 60°C Dry for more than a week, dry enough to be g...

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Abstract

The present invention provides a preparation method of memristor, and relates to the memory manufacturing technology field. The problem of negative influence of semiconductor materials is effectively solved. The method comprises the steps: the step 1: collecting enough dried leaves; the step 2: obtaining ultrafine leaf powder for standby through adoption of collected leaves in the step 1 by employing the separation method; the step 3: dissolving the ultrafine leaf powder obtained in the step 2 into a ethyecellulose solution, and preparing a colloid; the step 4: taking fluorine doped stannic oxide transparent conducting glass FTO as a substrate, and employing the spin-coating method to perform spin coating of the colloid at one conductive surface of the substrate to form a film as a dielectric layer; the step 5: drying the substrate with the dielectric layer obtained in the step in a drying case with the temperature of 60 DEC G for more than 12 hours; the step 6: putting the substrate dried in the step 5 into a vacuum deposition device; and the step 7: taking the surface deposition metallic silver of the dielectric layer on the substrate as an upper electrode through the vacuum deposition method to obtain a memristor having a silver/leaf/FTO structure.

Description

technical field [0001] The invention relates to the technical field of memory manufacturing. Background technique [0002] Memory has always occupied a very important position in the entire IC market. According to statistics in 2007, the sales volume of the global memory market has reached 60 billion US dollars, and the market share is still expanding. Currently used memory can be divided into two categories, namely volatile random access memory and non-volatile memory. The main products of the former are dynamic random access memory and static random access memory. The data storage speed is fast, but when the power supply ends, the stored data will disappear quickly, so the stored information needs to be constantly refreshed. The latter mainly include ROM (read-only memory), PROM (programmable memory), EEPROM (electrically erasable memory), Flash (flash memory), etc., their storage speed is relatively slow, but they can still be kept after power off. The feature of stori...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L45/02G11C13/00
CPCG11C13/0002H10N70/00H10N70/20H10N70/881H10N70/011
Inventor 孙柏张欣赵勇张勇
Owner SOUTHWEST JIAOTONG UNIV
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