Material growth device, growth method and detection device using gas phase transport

A gas phase transmission and growth device technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of uneven growth thickness, lack of growth technology, device performance and reliability decline, and achieve doping concentration The effect of optimization, simplification of the production process, and easy growth rate

Active Publication Date: 2021-08-31
姜全忠
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the lack of a growth chamber, the growth chamber is surrounded, and the atmosphere of the growth chamber cannot be controlled; and, at high temperatures, the radial temperature gradient is too large, and the growth thickness is uneven
In addition, due to the lack of proper growth technology in growing SiC multilayer junction materials, particle implantation technology has to be used, which causes lattice damage, reduces the electron mobility of the DMOSFET conductive channel, and degrades device performance and reliability.

Method used

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  • Material growth device, growth method and detection device using gas phase transport
  • Material growth device, growth method and detection device using gas phase transport
  • Material growth device, growth method and detection device using gas phase transport

Examples

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Effect test

example 1

[0050] Example 1: Growth of quasi-intrinsic SiC epitaxial film

[0051] Using an induction heated growth system using vapor transport, Figure 5 is its cross-section:

[0052] 1) Growth device: the metal vacuum chamber 401 is made of stainless steel; its wall can be fed with cooling water; The internal volume is: diameter φ80cm x 80cm.

[0053]Use 4 insulating, relatively heat-insulating alumina ceramic rods (bottom) and molybdenum tubes (upper) to make the support 412, a total of 15cm, diameter φ3cm, the entire growth chamber 402 is fixed on the bottom surface of the vacuum chamber 401. And between the water-cooled induction heating device 404 (ie high-frequency coil) and the growth chamber 402, a quartz tube 416 and a graphite foam 417 with holes (~2cm thick) are added. The former plays the role of insulation, and the latter plays the role of heat insulation. Many 0.5mm drill holes are deliberately formed in the graphite foam 417 to facilitate the overflow of impurity ...

example 2

[0060] Example 2: Growth of multilayer structure SiC epitaxial film

[0061] Using a growth system using vapor transport, induction heating, Figure 5 is its cross section.

[0062] Growth device: the metal vacuum chamber 401 is made of stainless steel; its wall can be fed with cooling water; and a vacuum pump interface 413 and a light entrance 414 are cut. The internal volume is: diameter φ80cm x 80cm.

[0063] Using 4 insulating, relatively heat-insulating alumina ceramic rods (lower part) and molybdenum tubes (upper part) 412, a total of 15 cm, diameter φ3 cm, the entire growth chamber 402 is fixed on the bottom surface of the vacuum chamber 401. And between the water-cooled induction heating device (ie high-frequency coil) 404 and the growth chamber 402, a quartz tube 416 and a graphite foam 417 with holes (~2cm thick) are added. The former plays the role of insulation, and the latter plays the role of heat insulation. Many 0.5mm drill holes are deliberately formed i...

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Abstract

The invention discloses a material growth device using gas phase transmission, which includes a vacuum chamber and a growth chamber, the growth chamber is placed in the vacuum chamber, the growth chamber includes an air outlet and at least two inner surfaces, and the two inner surfaces are respectively used for holding the The required growth source material and substrate; the growth source material at least includes an upper surface and a lower surface, the upper surface of the growth source material is opposite to the substrate, and the lower surface is in contact with the growth chamber; the substrate includes at least a growth surface and a back surface, The back side of the substrate is in contact with the growth chamber, and the growth surface is opposite to the growth source material, and a growth chamber is formed between the upper surface of the growth source material and the growth surface of the substrate; it is characterized in that: the upper surface of the growth source material, the The growth surface, the growth chamber and the air outlet are arranged so that the air flow generated by the growth source material is parallel to the growth surface of the substrate when flowing on the growth surface of the substrate. A method for forming materials using the growth device and a detection device for the growth process of the material are also disclosed.

Description

technical field [0001] The invention relates to a material growth device using gas phase transmission, a method for forming materials using the growth device, and a detection device for the growth process. Background technique [0002] Renewable energy technologies and clean electric vehicles in the 21st century require a new generation of transistor devices as switching devices for two types of circuits with important applications. One type is a DC transformer (converter): it converts a low DC voltage into a high voltage DC voltage, thereby reducing the current in the circuit to reduce heat loss, and thus applied to solar farms and electric vehicles to increase their operating voltage. The other type is the inverter: it can convert the DC current of the motor into a three-phase AC current to drive the motor, or convert the DC current generated by the solar farm into an AC current, so as to transmit electric energy to the current There is the grid. Therefore, such transist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/08C30B25/14C30B25/16C30B29/36C23C16/32C23C16/52
CPCC23C16/325C23C16/52C30B25/08C30B25/14C30B25/16C30B29/36
Inventor 姜全忠徐现刚
Owner 姜全忠
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