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High-sensitivity solar blind deep ultraviolet light detector

A deep-ultraviolet, high-sensitivity technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problem that the sensitivity cannot meet the needs of the application, and achieve the effect of avoiding the interference of sunlight and improving the sensitivity.

Active Publication Date: 2017-08-01
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the sensitivity of the solar-blind deep ultraviolet light detectors in the prior art is far from meeting the needs of the application, and the high-sensitivity solar-blind deep ultraviolet light detectors are still the focus of detector development

Method used

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  • High-sensitivity solar blind deep ultraviolet light detector
  • High-sensitivity solar blind deep ultraviolet light detector
  • High-sensitivity solar blind deep ultraviolet light detector

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Experimental program
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Embodiment 1

[0024] This embodiment 1 is directed to a photodetector with an active structure, and the electric field of the photodetector with an active structure is provided by an external power supply. reference image 3 , image 3 It is a schematic diagram of the solar-blind deep ultraviolet light detector with an active four-electrode structure of the present invention, which includes:

[0025] (001) Oriented single-side polished lanthanum aluminate (LaAlO 3 ) The single crystal material is used as the absorber 11, the thickness is 0.5mm, the width is 5mm, and the length is 10mm, and its polished surface is used as the incident surface of the detection light;

[0026] The first electrode 12 and the second electrode 13 are respectively arranged at opposite ends of the polishing surface of the absorber 11 in the length direction and are made of silver material, and the shape is a bar with a width of 1 mm;

[0027] The third electrode 14 and the fourth electrode 15 are respectively arranged in ...

Embodiment 2

[0038] This embodiment 2 is aimed at the photodetector of passive structure, and the photodetector of passive structure uses beveled oxide single crystal material as the absorber, such as Figure 4 The dotted line in the middle indicates that the crystal orientation of the surface of the single crystal material of the absorber 21 has an inclination with respect to the normal of the surface. The chamfered surface is asymmetric. When a light pulse is incident on the surface, the material absorbs the incident light. While generating electron-hole pairs, the absorber 1 generates a temperature gradient from the surface to the body. Due to the asymmetry of the surface, the temperature gradient will generate an electric field on the surface of a vertical surface step, which is "Seebeck". The effect causes the electrons and holes generated by the photoelectric effect to move to both ends respectively, forming a photovoltaic voltage between the first electrode 22 and the second electrode...

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Abstract

The invention provides a high-sensitivity solar blind deep ultraviolet light detector, which comprises an absorber, a first electrode, a second electrode, a third electrode and a fourth electrode, wherein the absorber is formed by an oxide single crystal material with a band gap of 5 eV to 8eV; the first electrode and the second electrode are arranged at two ends of the absorber respectively; and the third electrode and the fourth electrode are arranged inside the first electrode and the second electrode respectively. The high-sensitivity solar blind deep ultraviolet light detector can eliminate influences of a Schottky diode, the sensitivity of the detector can be improved greatly, and the detector can be applied to fields such as scientific research and military affairs.

Description

Technical field [0001] The invention relates to a light detector, in particular to a four-electrode structure high-sensitivity solar-blind deep ultraviolet light detector. Background technique [0002] Wavelength is less than The spectral region is called the solar blind zone. Because solar blind deep ultraviolet light detectors are not interfered by sunlight, they can detect deep ultraviolet light signals under sunlight environmental conditions, so they are used in military, defense and scientific research such as early warning and missile interception. The field has very important applications. We have developed a solar-blind deep ultraviolet detector with a rise time of up to nanoseconds and a fast response perovskite oxide single crystal. For example, Document 1: J. Xing, etc., Optics Letters, Vol.34,No.11,1675( 2009); Document 2: Xu Wang et al., Physica B, 392,104 (2007); Chinese Patent 1: Authorized Announcement Number is CN 102148281 B and China Patent 2: Authorized Anno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/032H01L31/102
CPCH01L31/022408H01L31/032H01L31/102
Inventor 吕惠宾郭海中葛琛金奎娟杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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