Water-cooling jacket device of monocrystalline silicon growth furnace

Abstract

The invention provides a water-cooling jacket device of a monocrystalline silicon growth furnace. The water-cooling jacket device comprises a water-cooling flange, two water inlet pipes, two water outlet pipes and a water-cooling cylinder, wherein the water-cooling cylinder comprises an inner cylinder, an outer cylinder and a second water-stop sheet, and the second water-stop sheet is arranged between the inner cylinder and the outer cylinder; the outer wall of the inner cylinder, the inner wall of the outer cylinder and the sheet wall of the second water-stop sheet are matched to form two independent water-cooling cylinder cooling water loops; each independent water-cooling cylinder cooling water loop comprises a vertical straight line loop and an S-shaped loop, a water-cooling cylinder water inlet is formed in the top end of the straight line loop, the bottom of the straight line loop is connected to the bottom end of the S-shaped loop, and a water-cooling cylinder water outlet is formed in the top end of the S-shaped loop. According to the water-cooling jacket device, the crystal pulling speed can be effectively increased, and the growth time of crystal bars can be shortened; by arranging the water-cooling jacket device, the average pull speed of equal-diameter growth of 8.5-inch monocrystalline bars is increased to 1.2mm / min-1.3mm / min, and crystal ingots with high yield and quality and relatively low cost can be obtained.

Description

technical field [0001] The invention relates to single crystal silicon growth equipment, in particular to a water cooling jacket device applied to a single crystal silicon growth furnace. Background technique [0002] The existing mainstream monocrystalline silicon growth furnace is not equipped with a water-cooling jacket device. At present, the average growth rate of an 8.5-inch crystal ingot is 0.8-0.9 mm / min, and the crystal growth rate is low. It is difficult to obtain high yield, high quality, and low The cost of the boule. Contents of the invention [0003] Aiming at the problems existing in the prior art, the present invention provides a single crystal silicon growth furnace water cooling jacket device, which can effectively increase the crystal pulling rate and reduce the growth time of crystal ingots; The average growth rate is increased to 1.2-1.3mm / min, and crystal ingots with high yield, high quality and lower cost can be obtained. [0004] The technical sol...

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Problems solved by technology

[0002] The existing mainstream monocrystalline silicon growth furnace is not equipped with a water-cooling jacket device. At present, the average growth rate of an 8.5-inch crystal ingot is 0.8-0.9 mm / min, and the crystal growth rate is low. It is difficult to obtain high yield, high quality, and low cost of boule

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