A LED chip structure with a metal reflective layer on the sidewall and the bottom and a manufacturing method thereof

Abstract

The invention relates to an LED (Light Emitting Diode) chip structure having metal reflection layers on side walls and bottom and a manufacturing method thereof. The manufacturing method comprises: depositing a silica film on a substrate, preparing a silica mask using photolithography, depositing a metal reflection layer on the silica mask, and then growing a buffer layer, an N-type semiconductor, an active layer, a P-type semiconductor, an insulating layer, a metal reflection layer and a passivation layer in sequence; and etching an epitaxial wafer into a P-type semiconductor layer by adopting photolithography, preparing a transparent conductive layer, then further etching the epitaxial wafer into an N-type semiconductor layer by adopting photolithography, and preparing an N-type electrode and a P-type electrode on the N-type semiconductor layer and the transparent conductive layer respectively. The method is compatible with the present process production flow, light that cannot be utilized by the conventional LED can be utilized after multiple reflections by introducing the metal reflection layers into the conventional LED device structure, the probability of total reflection of light on the surface of the substrate is reduced, and the luminous efficiency of the LED chip is thus improved.

Description

Technical field: [0001] The invention belongs to the field of light-emitting device manufacturing, and in particular relates to an LED chip structure with a metal reflective layer on the side wall and bottom and a manufacturing method thereof. Background technique: [0002] Compared with traditional lighting sources, semiconductor light-emitting diodes have the advantages of small size, fast response, long service life, energy saving and environmental protection, and are widely used in various fields such as indoor and outdoor lighting, large-screen display, backlight, traffic signal lights, and car lights. . [0003] The electro-optic efficiency of LED depends on the product of current injection efficiency, internal quantum efficiency and light extraction rate. At present, the current injection efficiency of generally better chips can reach 90% or higher, and the internal quantum efficiency can reach about 70%. However, due to the high refractive index of GaN materials, mo...

AI Technical Summary

Problems solved by technology

At present, the current injection efficiency of generally better chips can reach 90% or higher, and the internal quantum efficiency can reach about 70%. However, due to the high refractive index of GaN materials, most photons are bound due to total reflection. Inside the chip until it is absorbed by the material, it cannot be effectively used, resulting in a low light extraction rate of the LED

Thus affecting the further improvement of LED electro-optical efficiency

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