Manufacturing method for perovskite and gallium arsenide hetero-integrated solar cell, and cell
A technology of solar cells and perovskite cells, applied in the field of solar cells, can solve the problems of gallium arsenide cell minority carrier lifetime reduction, photoelectric conversion efficiency reduction, deep energy level defects, etc., to improve photoelectric conversion efficiency and facilitate heterogeneous integration , Improve the effect of application prospects
Active Publication Date: 2017-08-15
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology
However, during the epitaxial growth process, when the doping ratio of Al is high, it is easy to react with oxygen to generate deep level defects, resulting in a decrease in the minority carrier lifetime of GaAs cells, increased recombination, and a decrease in photoelectric conversion efficiency.
Therefore, the current technology has not completely solved the problem of epitaxial growth of gallium arsenide material doped with high proportion of Al
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[0025] In order to further understand the invention content, characteristics and effects of the present invention, the following examples are given, and detailed descriptions are as follows in conjunction with the accompanying drawings:
[0026] see figure 1 , a method for manufacturing a solar cell heterogeneously integrated with perovskite and gallium arsenide, comprising the steps of:
[0027] Step 101, preparing multi-junction gallium arsenide battery 1 and perovskite battery respectively;
[0028] Step 102, preparing metal grid lines 2 on the surface of the multi-junction GaAs cell and the perovskite cell by photolithography and coating process;
[0029] Step 103 , bonding and integrating the multi-junction GaAs cell and the perovskite cell through a metal bonding process.
[0030] Further: the multi-junction gallium arsenide solar cell includes at least three junction sub-cells; wherein, the bandgap of the first sub-cell is 0.6eV-0.8eV, the bandgap of the second sub-ce...
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Abstract
The invention discloses a manufacturing method for a perovskite and gallium arsenide hetero-integrated solar cell, and the cell. The manufacturing method is characterized by comprising the following steps of step 1, preparing a multi-junction gallium arsenide cell and a perovskite cell separately; step 2, preparing metal grid lines on the surfaces of the multi-junction gallium arsenide cell and the perovskite cell through photoetching and film coating processes; and step 3, enabling the multi-junction gallium arsenide cell and the perovskite cell to be bonded and integrated together through a metal bonding process. The perovskite solar cell with high forbidden bandwidth is used as a sub cell to replace a top cell of the multi-junction gallium arsenide solar cell, so that the problem of difficulty in preparation of the top cell of the multi-junction gallium arsenide solar cell with three junctions or even higher and with high forbidden bandwidth can be solved; the photoelectric conversion efficiency of the multi-junction gallium arsenide solar cell with three junctions or even higher can be greatly improved; and by adoption of the metal bonding way, the perovskite solar cell and the multi-junction gallium arsenide solar cell can be cascaded through the metal grid lines, so that hetero-integration can be convenient, and the process is mature and high in repeatability.
Description
technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell manufacturing method and a cell for heterogeneous integration of perovskite and gallium arsenide. Background technique [0002] Semiconductor materials can only absorb incident photons with energy greater than their band gap, and each absorbed photon can only emit a pair of electron-hole pairs at most. That is to say, for an incident photon whose energy is smaller than its band gap, the semiconductor material is transparent; for an incident photon whose energy is much greater than its band gap, the semiconductor material can only release a pair of electron-hole pairs after absorbing it. , the excess energy will be converted into thermal energy of lattice vibration in the form of phonon radiation, resulting in energy loss. The solar radiation spectrum has a strong distribution in the wavelength range of 0.15-4 μm. In order to absorb as much solar radiation energy...
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IPC IPC(8): H01L25/16H01L21/603
CPCH01L24/82H01L25/167H01L2224/82203H01L2224/82896
Inventor 薛超高鹏张无迪刘如斌孙强肖志斌王宇
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST