This invention provides a method for preparing a P-type
polycrystalline silicon layer, a method for preparing a TBC (Transient Carbon
Fiber)
cell, and a TBC
cell, specifically relating to the field of
solar cell fabrication technology. The method for preparing the P-type
polycrystalline silicon layer involves first preparing a
polycrystalline silicon-
amorphous silicon stack on an N-type
crystalline silicon substrate with a first tunneling
oxide layer on the back side, followed by
boron diffusion to obtain a P-type polycrystalline
silicon layer and a BSG (Bipolar
Solid State Geographic Array) layer. The polycrystalline
silicon-
amorphous silicon stack includes a first polycrystalline
silicon layer, a second polycrystalline silicon layer, a third polycrystalline silicon layer, and an
amorphous silicon layer arranged sequentially. The polycrystalline silicon-amorphous silicon stack is prepared using a stepped cooling and boosting LPCVD (Liquid
Crystallization-
Voltage Continuous
Chemical Deposition) process. This structure effectively alleviates the accumulation of interfacial thermal stress caused by
thermal expansion mismatch, suppresses
wafer warping and localized bonding during post-reaction cooling, significantly reduces the risk of mechanical scratches and fragmentation caused by inter-
wafer contact in subsequent material feeding and
wafer separation processes, and improves the process consistency and
production line yield of the P-type polycrystalline silicon layer structure.